PHE13007 NXP Semiconductors, PHE13007 Datasheet

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PHE13007

Manufacturer Part Number
PHE13007
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
GENERAL DESCRIPTION
The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.
QUICK REFERENCE DATA
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
February 1999
Silicon Diffused Power Transistor
SYMBOL
V
V
V
V
I
I
P
V
t
SYMBOL
V
V
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
f
C
CM
B
BM
PIN
stg
j
CESM
CBO
CEO
EBO
tot
CEsat
tab
CESM
CEO
CBO
EBO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-Base voltage (I
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Emitter-Base voltage (I
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
B
B
= 0)
= 0)
PIN CONFIGURATION
tab
CONDITIONS
V
T
I
I
CONDITIONS
V
T
CONDITIONS
in free air
C
C
1 2 3
mb
mb
1
BE
BE
= 5.0 A;I
= 5 A; I
= 0 V
= 0 V
25 ˚C
25 ˚C
B1
B
= 1 A
= 1.0 A
SYMBOL
b
TYP.
TYP.
MIN.
0.35
Product specification
-65
40
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PHE13007
MAX.
MAX.
MAX.
e
c
1.56
700
700
400
120
700
400
700
150
150
2.0
16
80
16
80
9
8
9
8
4
8
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
V
V
A
A
V
V
V
V
V
A
A
A
A

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PHE13007 Summary of contents

Page 1

... Philips Semiconductors Silicon Diffused Power Transistor GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER ...

Page 2

... 5 CONDITIONS Con Bon Boff ohms BB2 Con Bon - Con Bon - 100 ˚ Product specification PHE13007 MIN. TYP. MAX 0 1 1.0 400 - - - 0.15 1.0 - 0.35 2.0 - 0.51 3.0 - 0.92 1.2 - 1.05 1.6 - 1.00 1 ...

Page 3

... VCEOsust . CEOsust = 300 V; -V VCC VCC T.U. Fig. 6. Switching times waveforms with inductive load 0.01. p requirements. Bon 3 Product specification PHE13007 ICon ton toff IBon 30ns -IBoff VCC LC LB T.U.T. Fig. 5. Test circuit inductive load 200 uH ...

Page 4

... Fig.11. Base-Emitter saturation voltage Solid lines = typ values, V VCESAT/V 0.6 0.5 0.4 0.3 0.2 0 0.2 = f(I ) Fig.12. Collector-Emitter saturation voltage Solid lines = typ values Product specification PHE13007 VCEsat/V IC= 0.01 0.10 1.00 IB/A = f(IB); T CEsat -40C Tj=100C 25C 0 IC/A = f(IC); at IC/IB =4. BEsat Tj=100C 25C 0.4 0 IC/A = f(IC); at IC/IB =4. CEsat 10.00 =25˚ ...

Page 5

... 1E+00 0 Fig.15. Reverse bias safe operating area ( VCC LC VCL T.U.T. = 5V,3V & 1V Product specification PHE13007 0 100 200 300 400 500 600 VCEclamp/V for -V = 5V,3V & 1V. BE -5V -3V -1V 700 800 < jmax Rev 1.000 ...

Page 6

... Dimensions in mm Net Mass 3,0 max not tinned Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.16. TO220AB; pin 2 connected to mounting base. 6 Product specification PHE13007 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.000 15,8 max ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 7 Product specification PHE13007 Rev 1.000 ...

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