BFN16 Diodes, Inc., BFN16 Datasheet
BFN16
Manufacturer Part Number
BFN16
Description
Sot89 Npn Silicon Planar High Voltage Transistor
Manufacturer
Diodes, Inc.
Datasheet
1.BFN16.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFN16
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995
COMPLEMENTARY TYPE -
PARTMARKING DETAILS -
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle
For typical characteristics graphs see FMMTA42 datasheet
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
amb
=25°C
SYMBOL
V
V
V
I
I
V
V
h
f
C
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
obo
DD
BFN17
MIN.
250
250
5
25
40
40
Typ.70
Typ.1.5
3 - 42
amb
SYMBOL
V
V
V
I
I
I
P
T
CM
C
B
tot
j
CBO
CEO
EBO
MAX.
100
20
100
0.4
0.9
= 25°C).
:T
stg
UNIT
V
V
V
nA
nA
V
V
MHz
pF
A
2%
-65 to +150
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
f=20MHz
V
C
C
E
C
C
C
C
C
C
VALUE
=100 A
CB
CB
EB
CB
=100 A
=1mA
=20mA, I
=1mA,V
=10mA, V
=30mA, V
=20mA, V
=20mA, I
250
250
500
200
100
=3V
=250V
=250V, T
=30V,f=1MHz
5
1
C
BFN16
CE
B
B
=10V*
CE
CE
CE
=2mA
=2mA
amb
B
=10V
=10V
=10V*
=150 °C
C
UNIT
mA
mA
mA
W
°C
V
V
V
E
Related parts for BFN16
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
