MMJT9410 ON Semiconductor, MMJT9410 Datasheet - Page 4

• Manufacturer Part Number: MMJT9410
• Description: Npn Transistor Bipolar Power Transistor
• Manufacturer: ON Semiconductor

4.0
3.0
2.0
1.0
0.0001
0
100
1.0
0.001
10
0.01
25
0.1
T
T
0.1
C
A
0.0001
V
f
T
Figure 9. Current−Gain Bandwidth Product
test
A
D = 0.5
CE
0.05
0.02
0.01
0.2
0.1
= 25°C
= 1.0 MHz
= 10 V
Figure 11. Power Derating
50
SINGLE PULSE
I
C
, COLLECTOR CURRENT (AMP)
T, TEMPERATURE (°C)
0.001
75
1.0
100
0.01
Figure 12. Thermal Response
125
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MMJT9410
t, TIME (seconds)
150
0.1
10
4
0.001
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
v 150°C. T
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
0.01
1.0
0.1
10
There are two limitations on the power handling ability of
The data of Figure 10 is based on T
R
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
0.1
JA
J(pk)
qJA
Figure 10. Active Region Safe Operating Area
= 165°C/W
(t) = r(t) q
1.0
− T
A
V
= P
J(pk)
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
JA
(pk)
1
q
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
may be calculated from the data in
JA
5.0 ms
(t)
1.0
10
P
(pk)
100 ms
DUTY CYCLE, D = t
0.5 ms
J(pk)
10
t
1
100
t
2
= 150°C; T
C
1
/t
− V
2
J(pk)
C
100
1000
CE
is