NJD2873 ON Semiconductor, NJD2873 Datasheet

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NJD2873

Manufacturer Part Number
NJD2873
Description
Plastic Power Transistors
Manufacturer
ON Semiconductor
Datasheet

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NJD2873T4
Plastic Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*These ratings are applicable when surface mounted on the minimum pad sizes
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 8
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
recommended.
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Total Device Dissipation @ T
Operating and Storage Junction
Thermal Resistance
Designed for high−gain audio amplifier applications.
Pb−Free Package is Available
High DC Current Gain −
Low Collector−Emitter Saturation Voltage −
High Current−Gain − Bandwidth Product −
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Derate above 25°C
Derate above 25°C
Temperature Range
h
V
f
T
Characteristic
FE
CE(sat)
= 65 MHz (Min) @ I
= 120 (Min) @ I
Rating
= 40 (Min) @ I
Machine Model, C u 400 V
Junction−to−Ambient*
= 0.3 Vdc (Max) @ I
Junction−to−Case
A
C
Continuous
= 25°C*
= 25°C
C
C
Peak
= 500 mA
= 2 A
C
= 100 mA
Symbol
Symbol
T
V
C
R
R
J
V
V
P
P
, T
CEO
I
I
qJC
qJA
CB
EB
= 1 A
C
B
D
D
stg
−65 to +175
Value
0.011
1.68
Max
89.3
0.4
0.1
50
50
15
10
5
2
3
1
W/°C
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
°C
W
W
†For information on tape and reel specifications,
NJD2873
NJD2873G
NJD2873RL
NJD2873RLG
NJD2873T4
NJD2873T4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 2
Device
3
POWER TRANSISTORS
ORDERING INFORMATION
Y
WW
G
4
http://onsemi.com
2 AMPERES
15 WATTS
50 VOLTS
CASE 369C
SILICON
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
STYLE 1
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
= Year
= Work Week
= Pb−Free Device
Publication Order Number:
1800 Units / Reel
1800 Units / Reel
2500 Units / Reel
2500 Units / Reel
75 Units / Rail
75 Units / Rail
MARKING
DIAGRAM
Shipping
NJD2873T4/D
2873G
YWW
J

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NJD2873 Summary of contents

Page 1

... Units / Rail (Pb−Free) NJD2873RL DPAK 1800 Units / Reel NJD2873RLG DPAK 1800 Units / Reel (Pb−Free) NJD2873T4 DPAK 2500 Units / Reel NJD2873T4G DPAK 2500 Units / Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...

Page 2

... MHz test Output Capacitance ( Vdc 0.1 MHz Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. = ⎪h ⎪• test NJD2873T4 (T = 25°C unless otherwise noted) C Symbol V CEO(sus) I CBO I EBO h FE ≤ 150° CE(sat ...

Page 3

... Figure 2. DC Current Gain 1.2 1.1 1.0 0.9 −40°C 0.8 0.7 25°C 0.6 100°C 0.5 150°C 0.4 0.3 175°C 0.2 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 4. Base−Emitter Saturation Voltage NJD2873T4 TYPICAL CHARACTERISTICS 100 125 150 T, TEMPERATURE (°C) Figure 1. Power Derating 0 2 0.3 0.2 0 Figure 3. Collector−Emitter Saturation Voltage 1 ...

Page 4

... D = 0.5 0.5 0.2 0.3 0.2 0.1 0.05 0.1 0.07 0.02 0.05 0.01 0.03 0 (SINGLE PULSE) 0.02 0.01 0.02 0.05 0.1 0.2 NJD2873T4 R (t) = r(t) q qJC 10°C/W MAX qJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME − (t) J(pk) C (pk TIME (ms) Figure 6. Thermal Response http://onsemi.com 4 P (pk DUTY CYCLE ...

Page 5

... BSC R 0.180 0.215 4.57 S 0.025 0.040 0.63 U 0.020 −−− 0.51 V 0.035 0.050 0.89 Z 0.155 −−− 3.93 6.172 0.243 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NJD2873T4/D 6.22 6.73 2.38 0.88 0.58 1.14 1.01 0.58 2.89 5.45 1.01 −−− 1.27 −−− ...

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