BUD630 ETC-unknow, BUD630 Datasheet - Page 2

• Manufacturer Part Number: BUD630
• Description: Silicon Npn High Voltage Switching Transistor
• Manufacturer: ETC-unknow

Maximum Thermal Resistance
T
Electrical Characteristics
T
BUD630
Vishay Telefunken
Junction case
Collector cut-off current
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation voltage I
Base-emitter saturation voltage
DC forward current transfer ratio
Collector-emitter working voltage
Dynamic saturation voltage
Gain bandwidth product
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2 (9)
case
case
y
= 25 C, unless otherwise specified
= 25 C, unless otherwise specified
Parameter
Parameter
g
g
g
V
V
I
I
I
I
I
I
V
V
V
V
V
I
–V
I
I
I
f = 1 MHz
C
measure
E
C
C
C
C
B1
C
C
C
CES
CES
CE
CE
CE
CE
S
= 1 mA
= 300 mA; L = 125 mH;
= 1 A; I
= 3 A; I
= 1 A; I
= 3 A; I
= 3 A; I
= 3 A; I
= 200 mA; V
BB
= 50 V; L = 1 mH; I
= 2 A; –I
= 2 V; I
= 2 V; I
= 2 V; I
= 5 V; I
= 700 V
= 700 V; T
= 5 V
Test Conditions
Test Conditions
= 100 mA
B
B
B
B
B
B
= 0.25 A
= 1 A
= 0.25 A
= 1 A
= 0.6 A; t = 1
= 0.6 A; t = 3
C
C
C
C
B2
= 10 mA
= 1 A
= 3 A
= 6 A
= 0.6 A;
CE
case
= 10 V;
= 150 ° C
C
= 6 A;
m
m
s
s
V
V
V
V
Symbol
V
V
V
V
CEsatdyn
CEsatdyn
(BR)CEO
(BR)EBO
V
Symbol
I
I
h
h
h
h
CEsat
CEsat
BEsat
BEsat
CES
CES
CEW
R
f
FE
FE
FE
FE
T
thJC
Min
400
500
11
15
15
7
4
4
Document Number 86503
Value
3.12
Typ
5
1
Rev. 2, 20–Jan–99
Max
0.5
0.2
0.4
1.2
2.5
50
10
1
K/W
Unit
MHz
Unit
mA
m
V
V
V
V
V
V
V
V
V
A