BUH1215 STMicroelectronics, BUH1215 Datasheet

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... T St orage Temperature stg T Max. Operating Junction Temperature j January 1999 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR using TO-218 Emitter INTERNAL SCHEMATIC DIAGRAM Value 1500 = 0) 700 200 -65 to 150 150 BUH1215 Uni 1/7 ...

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... BUH1215 THERMAL DATA R Thermal Resistance Junction-case t hj-ca se ELECTRICAL CHARACTERISTICS (T Symb ol Parameter I Collector Cut-off V CES CE Current ( Emitter Cut-off Current V EBO Collector-Emitter I = 100 mA CEO(sus) C Sustaining Voltage V Emitter-Base Voltage EBO Collector-Emitter CE(sat ) C Saturation Voltage V Base-Emitt er ...

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... Derating Curve Collector Emitter Saturation Voltage Power Losses at 64 KHz BUH1215 DC Current Gain Base Emitter Saturation Voltage Switching Time Inductive Load at 64 KHz (see figure 2) 3/7 ...

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... BUH1215 Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current I has to be provided for the lowest gain 100 C (line scan phase). On the other hand, negative base current I must be provided the B2 transistor to turn off (retrace phase) ...

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... Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit BUH1215 5/7 ...

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... BUH1215 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. TYP. A 4.7 C 1.17 D 2.5 E 0.5 F 1.1 G 10.8 H 14.7 L2 – 3. – Ø ¯ 6/7 MAX. MIN. 4.9 0.185 1.37 0.046 0.098 0.78 0.019 1.3 0.043 11.1 0.425 15.2 0.578 16.2 – 0.708 4.15 0.155 1.220 12.2 – 4.1 0.157 inch TYP. MAX. ...

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... The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . BUH1215 7/7 ...