BUH315D STMicroelectronics, BUH315D Datasheet

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BUH315D

Manufacturer Part Number
BUH315D
Description
High Voltage Fast-switching Npn Power Transistor
Manufacturer
STMicroelectronics
Datasheet

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BUH315D
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BUH315DFH
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BUH315DFP
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BUH315DP1
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BUH315DPI
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BUH315DT
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APPLICATIONS
DESCRIPTION
The
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
ABSOLUTE MAXIMUM RATINGS
December 1999
Symbol
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE.
HORIZONTAL DEFLECTION FOR COLOUR
TV
V
V
V
P
T
I
I
CBO
CEO
EBO
I
CM
I
BM
T
stg
C
B
t ot
j
BUH315D
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
St orage Temperature
Max. Operating Junction Temperature
is
manufactured
Parameter
p
c
< 5 ms)
= 25
C
p
E
= 0)
< 5 ms)
= 0)
B
o
= 0)
C
HIGH VOLTAGE FAST-SWITCHING
using
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
ISOWATT218
Value
1500
700
150
10
12
44
6
3
5
BUH315D
1
2
3
Uni t
o
o
W
V
V
V
A
A
A
A
C
C
1/7

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BUH315D Summary of contents

Page 1

... T St orage Temperature stg T Max. Operating Junction Temperature j December 1999 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ISOWATT218 using INTERNAL SCHEMATIC DIAGRAM Value 1500 = 0) 700 -65 to 150 150 BUH315D Uni 1/7 ...

Page 2

... BUH315D THERMAL DATA R Thermal Resistance Junction-case t hj-ca se ELECTRICAL CHARACTERISTICS (T Symb ol Parameter I Collector Cut-off V CES CE Current ( Emitter Cut-off Current V EBO Collector-Emitter CE(sat ) C Saturation Voltage V Base-Emitt BE(s at) C Saturation Voltage h DC Current Gain ...

Page 3

... Derating Curve Collector Emitter Saturation Voltage Power Losses at 16 KHz BUH315D DC Current Gain Base Emitter Saturation Voltage Switching Time Inductive Load at 16KHz (see figure 2) 3/7 ...

Page 4

... BUH315D Switching Time Resistive Load at 16 KHz BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current I has to be provided for the lowest gain 100 C (line scan phase). On the other hand, negative base current I ...

Page 5

... Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit BUH315D 5/7 ...

Page 6

... BUH315D ISOWATT218 MECHANICAL DATA mm DIM. MIN. TYP. A 5.35 C 3.30 D 2.90 D1 1.88 E 0.75 F 1.05 F2 1.50 F3 1.90 G 10.80 H 15. 20.80 L2 19.10 L3 22.80 L4 40.50 L5 4.85 L6 20.25 N 2.1 R 4.6 DIA 3.5 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended : 0.8 Nm; Maximum The side of the dissipator must be flat within 80 m 6/7 inch MAX. MIN. TYP. 5.65 0.211 3 ...

Page 7

... The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . BUH315D 7/7 ...

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