BUH417D Inchange Semiconductor Company, BUH417D Datasheet
BUH417D
Manufacturer Part Number
BUH417D
Description
Silicon Npn Power Transistors
Manufacturer
Inchange Semiconductor Company
Datasheet
1.BUH417D.pdf
(3 pages)
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Part Number
Manufacturer
Quantity
Price
Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High voltage
・High speed switching
・Built-in damper diode
APPLICATIONS
・Switching power supply for TV’s
PINNING
Absolute maximum ratings(Ta=25
SYMBOL
and monitors
V
V
V
PIN
P
T
I
I
CBO
CEO
EBO
I
CM
I
BM
T
1
2
3
C
stg
B
tot
j
Base
Collector
Emitter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current -peak
Base current (DC)
Base current -peak
Total power dissipation
Junction temperature
Storage temperature
DESCRIPTION
PARAMETER
℃)
Open emitter
Open base
Open collector
t
t
T
p
p
C
<5ms
<5ms
=25℃
CONDITIONS
Fig.1 simplified outline (TO-3PML) and symbol
Product Specification
-65~150
VALUE
BUH417D
1500
700
150
10
12
55
7
4
7
UNIT
W
℃
℃
V
V
V
A
A
A
A
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BUH417D Summary of contents
Page 1
... Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-3PML) and symbol ℃) CONDITIONS Open emitter Open base Open collector t <5ms p t <5ms p T =25℃ C Product Specification BUH417D VALUE UNIT 1500 V 700 ℃ 150 ℃ ...
Page 2
... =1700V =125℃ = =4A F PARAMETER 2 Product Specification BUH417D MIN TYP. MAX UNIT 700 V 1.5 V 1.3 V 1.0 mA 2.0 200 MAX UNIT ℃/W 2.27 ...
Page 3
... Inchange Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Product Specification BUH417D ...