LMN200B02 Diodes, Inc., LMN200B02 Datasheet

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LMN200B02

Manufacturer Part Number
LMN200B02
Description
200 Ma Load Switch Featuring Pre-biased Pnp Transistor And N-mosfet With Gate Pull Down Resistor
Manufacturer
Diodes, Inc.
Datasheet
Features
Mechanical Data
General Description
Maximum Ratings, Total Device
Thermal Characteristics
DDTB142JU_DIE
DSNM6047_DIE (with Gate Pull-Down
Resistor)
Power Dissipation
Power Derating Factor above 125
Output Current
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Equivalent to
One Heated Junction of PNP Transistor)
LMN200B02 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a
discrete pass transistor with stable V
depend on the input voltage and can support continuous maximum
current of 200 mA . It also contains a discrete N-MOSFET that can
be used as control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part of a
circuit or as a stand alone discrete device.
Notes:
DS30658 Rev. 6 - 2
Voltage Controlled Small Signal Switch
N-MOSFET with Gate Pull-Down Resistor
Surface Mount Package
Ideally Suited for Automated Assembly Processes
Lead Free By Design/ROHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 8
Ordering Information: See Page 8
Weight: 0.006 grams (approximate)
Sub-Component P/N
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
°
C
CE(SAT)
@T
Reference
which does not
A
Q1
Q2
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
(Note 3)
(Note 3)
www.diodes.com
PNP Transistor
Device Type
N-MOSFET
1 of 9
Symbol
Symbol
T
R
P
I
j
P
,T
out
θ JA
der
d
stg
Fig. 2 Schematic and Pin Configuration
Q1
PNP
E_Q1
C_Q1
1
6
DDTB142JU_DIE
E
C
1
R1
R1 (NOM)
B
2
Fig. 1: SOT-363
10K
10K
WITH GATE PULL DOWN RESISTOR
3
470
R2
-55 to +150
G_Q2
B_Q1
2
5
Value
Value
DSNM6047_DIE
200
200
625
1.6
6
LMN200B02
5
R2 (NOM)
37K
R3
G
470
S_Q2
4
D_Q2
3
4
S
D
Q2
NMOS
(NOM)
37K
© Diodes Incorporated
mW/°C
R3
°C/W
Unit
Unit
mW
mA
°C
LMN200B02
Figure
2
2

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LMN200B02 Summary of contents

Page 1

... LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET General Description LMN200B02 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable V ...

Page 2

... A Symbol V DSS V DGR Continuous V GSS Pulsed (tp<50 uS) Continuous (V = 10V www.diodes.com @T = 25°C unless otherwise specified A Value Unit -50 V - -200 mA Value Unit +/-20 V +/-40 115 mA 800 115 mA LMN200B02 © Diodes Incorporated ...

Page 3

... I - - -5V 200mA -50mA -5mA -5 -80mA -8mA C B ⎯ ⎯ KΩ ⎯ ⎯ KΩ ⎯ ⎯ ⎯ -10V -5mA ⎯ MHz f = 100MHz V = -10V 0A ⎯ 1MHz LMN200B02 © Diodes Incorporated ...

Page 4

... 200 DS(ON) D ⎯ ΚΩ ⎯ -25V 0V ƒ= 1MHz 30V, V =10V 200mA Ohm 150 Ohm 115 mA ⎯ 115 mA 800 mA ⎯ LMN200B02 © Diodes Incorporated ...

Page 5

... Fig CE(SAT COLLECTOR CURRENT (mA) C Fig BE(SAT COLLECTOR CURRENT (mA) C Fig vs DS30658 Rev vs vs www.diodes.com I , COLLECTOR CURRENT (A) C Fig vs. I CE(SAT COLLECTOR CURRENT (mA) C Fig vs. I BE(ON) C LMN200B02 © Diodes Incorporated ...

Page 6

... DS30658 Rev 100 125 150 www.diodes.com V , GATE-SOURCE VOLTAGE (V) GS Fig. 10 Transfer Characteristics I , DRAIN CURRENT (A) D Fig. 12 Static Drain-Source On-Resistance vs. Drain Current V GATE SOURCE VOLTAGE ( Fig. 14 Static Drain-Source On-Resistance vs. Gate-Source Voltage LMN200B02 © Diodes Incorporated ...

Page 7

... T , JUNCTION TEMPERATURE ( C) j Fig. 15 Static Drain-Source On-State Resistance vs. Junction Temperature 1 1.5 0.5 DS30658 Rev ° 2 www.diodes.com LMN200B02 © Diodes Incorporated ...

Page 8

... Application Details PNP Transistor (DDTB142JU) and N-MOSFET (DSNM6047) with gate pull-down resistor integrated as one in LMN200B02 can be used as a discrete entity for general purpose applications integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig 19, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device ...

Page 9

... DS30658 Rev Figure 23 Dimensions Typical dimensions in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com SOT-363 Dim Min Max A 0.1 0.3 B 1.15 1. 2.2 D 0.65 Nominal F 0.3 0.4 H 1.8 2 0 0.25 0.4 M 0.1 0.25 α 0° 8° All Dimensions in mm SOT-363* 2.5 1.3 0.42 0.6 1.9 0.65 LMN200B02 © Diodes Incorporated ...

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