IXZ318N50 IXYS Corporation, IXZ318N50 Datasheet
IXZ318N50
Manufacturer Part Number
IXZ318N50
Description
Ixz318n50 Z-mos Rf Power Mosfet
Manufacturer
IXYS Corporation
Datasheet
1.IXZ318N50.pdf
(3 pages)
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
R
R
Symbol
V
V
I
I
R
g
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOS
Optimized for RF Operation
Ideal for Class C, D, & E Applications
fs
J
JM
stg
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
thJC
thJHS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
I
T
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V
1.6mm(0.063 in) from case for 10 s
S
S
J
J
c
c
c
c
j
c
c
GS
DS
GS
DS
GS
GS
DS
≤ I
≤ 150°C, R
= 0
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C, Derate 4.4W/°C above 25°C
= 25°C
=0
DM
= 0 V, I
= V
= ±20 V
= 0.8V
= 20 V, I
= 50 V, I
, di/dt ≤ 1 00A/µs, V
GS
, I
DSS
D
D
DC
D
D
G
= 4 ma
= 250µΑ
, V
= 0.5I
= 0.5I
= 0.2Ω
DS
= 0
D25
D25
GS
, pulse test
TM
= 1 MΩ
T
T
J
DD
J
MOSFET Process
= 25C
=125C
≤ V
DSS
JM
,
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
500
-55
-55
3.5
0.325
typ.
175
300
3.5
Maximum Rat-
14
>200 V/ns
TBD
0.17 C/W
0.34 C/W
500
500
±20
±30
880
440
3.0
+ 175
19
95
19
max.
+175
±100
5 V/ns
6.5
50
1
ings
mJ
Z-MOS RF Power MOSFET
W
W
W
V
V
V
V
A
A
A
mA
nA
µA
°C
°C
°C
°C
Ω
V
V
S
g
GATE
Features
•
−
−
−
•
•
−
−
•
•
•
Advantages
•
•
•
IXZ318N50
SG1
Isolated Substrate
IXYS advanced Z-MOS process
Low gate charge and capacitances
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Optimized for RF and high speed
Easy to mount—no insulators needed
High power density
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
easier to drive
faster switching
Low R
V
I
R
P
D25
SG2
DSS
DC
DS(on)
DS(on)
=
=
= 0.325 Ω
=
SD1
19.0 A
880 W
500 V
SD2
DRAIN
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IXZ318N50 Summary of contents
Page 1
... C/W 0.34 C/W Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max. 500 3.5 6.5 ±100 = 25C 50 =125C 0.325 14 -55 +175 175 -55 + 175 300 3.5 IXZ318N50 Z-MOS RF Power MOSFET V = DSS I = D25 = 0.325 Ω R DS(on) ings GATE W W SG1 SG2 Features • ...
Page 2
... DSS(max DSS 4 5 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. TBD 4,891,686 4,931,844 5,187,117 5,237,481 6,583,505 6,710,463 IXZ318N50 Z-MOS RF Power MOSFET max. Ω max. 19 Α 114 A 1 5,017,508 5,486,715 6,727,585 ...
Page 3
... Ciss 1000.00 Crss 100.00 10.00 1. 100 IXZ318N50 Capacitance verses Vds Coss 150 200 250 300 Vds in Volts IXZ318N50 Z-MOS RF Power MOSFET 350 400 450 Doc #dsIXZ318N50 REV 06/04 © 2004 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf ...