IXZR18N50A IXYS Corporation, IXZR18N50A Datasheet
IXZR18N50A
Manufacturer Part Number
IXZR18N50A
Description
Ixzr18n50
Manufacturer
IXYS Corporation
Datasheet
1.IXZR18N50A.pdf
(3 pages)
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
R
R
Symbol
V
V
I
I
R
g
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
NChannel Enhancement Mode
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low
Low Capacitance Z-MOS
High dv/dt
Optimized for RF Operation
Nanosecond Switching
Ideal for Class C, D, & E Applications
fs
J
JM
stg
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
thJC
thJHS
DS(on)
Q
g
and
Test Conditions
V
V
V
V
V
=125C
V
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V
test
1.6mm(0.063 in) from case for 10
s
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
I
T
T
S
S
GS
DS
GS
DS
GS
GS
DS
J
J
c
c
c
c
j
c
c
≤ I
= 0
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C, Derate 4.4W/°C above 25°C
= 25°C
=0
R
= 0 V, I
= V
= ±20 V
= 0.8V
= 20 V, I
= 50 V, I
DM
g
, di/dt ≤ 100A/µs, V
GS
, I
DSS
D
D
DC
D
D
= 4 ma
= 250µΑ
G
, V
= 0.5I
= 0.5I
= 0.2Ω
DS
= 0
D25
D25
GS
, pulse
TM
T
T
= 1 MΩ
J
J
DD
= 25C
MOSFET Process
≤ V
DSS
JM
Characteristic Values
(
,
T
J
= 25°C unless otherwise specified)
min.
500
-55
-55
3.5
0.325
typ.
175
300
3.5
14
Maximum Rat-
+ 175
max.
+175
±100
>200 V/ns
6.5
TBD
TBD
TBD
50
500
500
±20
±30
3.0
1
19
95
19
5 V/ns
IXZR18N50 & IXZR18N50A/B
ings
C/W
C/W
mA
nA
µA
mJ
°C
°C
°C
°C
Z-MOS RF Power MOSFET
W
W
W
Ω
V
V
S
g
V
V
V
V
A
A
A
Features
•
−
−
−
•
•
−
−
•
•
•
Advantages
•
•
•
Isolated Substrate
IXYS advanced Z-MOS process
Low gate charge and capacitances
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Optimized for RF and high speed
Easy to mount—no insulators needed
High power density
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
easier to drive
faster switching
Low R
V
I
R
P
D25
DSS
DC
DS(on)
DS(on)
=
=
= 0.325 Ω
=
TBD W
19.0 A
500 V
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IXZR18N50A Summary of contents
Page 1
... Pulse test, t ≤ 300µS, duty cycle d ≤ 0.5I , pulse D25 fs test stg 1.6mm(0.063 in) from case for Weight IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET Maximum Rat- ings 500 V 500 V ±20 V ± TBD mJ 5 V/ns ...
Page 2
... DSS(max DSS 4 5 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. TBD 4,891,686 4,931,844 5,187,117 5,237,481 6,583,505 6,710,463 IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET max. Ω 50: 1=G, 2=D, 3=S ns 50A: 1=G, 2= 50B: 1=D, 2=S, 3 max. Α 19 114 A 1 ...
Page 3
... IXZ318N50A/B Capacitance verses Vds Coss 150 200 250 300 Vds in Volts IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET 350 400 450 Doc #dsIXZR18N50_A/B REV 07/04 © 2004 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf ...