NP34N055 Renesas Electronics Corporation., NP34N055 Datasheet - Page 6

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NP34N055

Manufacturer Part Number
NP34N055
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
6
1.14 MAX.
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
4
1
2.3
5.1 TYP.
4.3 MIN.
6.5±0.2
2
Drain
2.3
Source
3
0.76±0.12
Body
Diode
1. Gate
2. Drain
3. Source
4. Fin (Drain)
No Plating
2.3±0.1
1.0
0.5±0.1
0 to 0.25
No Plating
0.5±0.1
Data Sheet D17521EJ1V0DS
NP34N055SLE

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