TB0640H Diodes, Inc., TB0640H Datasheet - Page 2

• Manufacturer Part Number: TB0640H
• Description: 100a Bi-directional Surface Mount Thyristor Surge Protective Device
• Manufacturer: Diodes, Inc.

Notes:
DS30360 Rev. 7 - 2
Electrical Characteristics
TB0640H
TB0720H
TB0900H
TB1100H
TB1300H
TB1500H
TB1800H
TB2300H
TB2600H
TB3100H
TB3500H
Part Number
1. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
2. I
3. Off-state capacitance measured at f = 1.0MHz, 1.0V
recovery time does not exceed 30ms.
H
> (V
Repetitive
Off-State
V
L
Voltage
/R
Rated
DRM
120
140
160
190
220
275
320
L
58
65
75
90
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
(V)
Symbol
V
I
V
Current @
V
DRM
I
I
I
C
V
Off-State
DRM
I
BO
I
Leakage
BR
PP
DRM
BR
BO
H
O
T
V
DRM
5
5
5
5
5
5
5
5
5
5
5
(uA)
@ T
Breakover
Voltage
V
BO
130
160
180
220
265
300
350
400
A
77
88
98
= 25°C unless otherwise specified
(V)
I
BR
@ I
On-State
RMS
Voltage
www.diodes.com
V
I
T
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
T
DRM
I
I
I
BO
signal, V
(V)
PP
H
= 1A
I
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
2 of 4
V
T
R
(mA)
Min
= 2V
50
50
50
50
50
50
50
50
50
50
50
Breakover
Current
DC
I
BO
Max (mA)
bias.
V
800
800
800
800
800
800
800
800
800
800
800
DRM
V
BR
V
Holding Current
(mA)
BO
Min
150
150
150
150
150
150
150
150
150
150
150
V
NOTE: 2
NOTE: 3
Parameter
I
H
Max (mA)
800
800
800
800
800
800
800
800
800
800
800
Capacitance
Off-State
C
O
TB0640H - TB3500H
200
200
200
120
120
120
120
80
80
80
80
(pF)
Marking
T064H
T072H
T090H
T110H
T130H
T150H
T180H
T230H
T260H
T310H
T350H
Code