MX26L12811MC ETC-unknow, MX26L12811MC Datasheet - Page 5

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MX26L12811MC

Manufacturer Part Number
MX26L12811MC
Description
128m [x8/x16] Single 3v Page Mode Mtp Memory
Manufacturer
ETC-unknow
Datasheet

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NOTES:
1. OE and WE should never be enabled simultaneously.
2. DQ refers to Q0-Q7 if BYTE is low and Q0-Q15 if BYTE is high.
3. X can be VIL or VIH for control and address pins.
4. See Section , "Read Identifier Codes" for read identifier code data.
5. See Section , "Read Query Mode Command" for read query data.
6. Command writes involving block erase, program, or lock-bit configuration are reliably executed when VCC is
7. Refer to Table 2 on page 7 for valid DIN during a write operation.
P/N:PM0990
Table 1. Bus Operations
Command
Sequence
Notes
CE
OE (1)
WE (1)
Address
Q (2)
within specification.
Read
Array
3
Enabled
VIL
VIH
X
Data out
Output
Disable
Enabled Disabled
VIH
VIH
X
High Z
X
X
X
High Z
Standby
Read ID
Enabled
VIL
VIH
See
Figure 2
Note 4
5
Read
Query
Enabled Enabled
VIL
VIH
See
Note 5
Table 6
MX26L12811MC
Read
Status
(WSM off)
VIL
VIH
X
Data out
Read
Status
(WSM on)
Enabled
VIL
VIH
X
Q7=Data out
Q15-8=High Z
Q6-0=High Z
REV. 1.0, OCT. 29, 2003
Write
6,7
Enabled
VIH
VIL
X
Data in

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