CFY67-08 Infineon Technologies Corporation, CFY67-08 Datasheet - Page 2

• Manufacturer Part Number: CFY67-08
• Description: Hirel Gaas Microwave Devices Hirel K-band Gaas Super Low Noise Hemt
• Manufacturer: Infineon Technologies Corporation

1
2
3
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage (reverse/ forward)
Drain current
Gate forward current
RF input power, C- and X-band
Junction temperature
Storage temperature
Total power dissipation
Soldering temperature
Electrical Characteristics (at T
Parameter
DC Characteristics
Drain- source saturation current
V
Gate threshold voltage
V
Drain current pinch-off
V
Gate leakage current at pinch-off
V
Transconductance
V
Gate leakage current at operation
V
Thermal Resistance
Parameter
Junction - soldering point
For V
At T
During 15 sec. maximum. The same terminal shall not be resoldered until 3 minuntes have elapsed.
DS
DS
DS
DS
DS
DS
S
= 2 V, V
= 2 V, I
= 1.5 V, V
= 1.5 V, V
= 2 V, I
= 2 V, I
DS
= 47°C. For T
2V. For V
D
D
D
GS
= 1 mA
= 15 mA
= 15 mA
GS
GS
DS
= 0 V
S
= -3 V
= -3 V
> 47°C derating is required.
2 V, derating is required.
3)
2)
1)
A
= 25 °C; unless otherwise specified)
2
Symbol
I
-V
I
-I
g
-I
Symbol
V
V
V
I
I
P
T
T
P
T
Symbol
R
DSS
Dp
D
G
j
stg
sol
Gp
m15
G15
DS
DG
GS
RF,in
tot
thJS
Gth
min.
0.2
15
50
-
-
-
-65...150
515 (tbc)
Values
-3...0.5
Value
Value
<0,5
150
200
230
typ.
<50
<50
3.5
4.5
0.7
30
65
60
10
2
max.
200
60
2
2
2007-08-17
-
-
CFY67...
Unit
mA
V
µA
mS
µA
Unit
V
mA
dBm
°C
mW
°C
Unit
K/W