NP110N055PUJ Renesas Electronics Corporation., NP110N055PUJ Datasheet - Page 4

• Manufacturer Part Number: NP110N055PUJ
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

4
500
400
300
200
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
5
4
3
2
1
0
4
3
2
1
0
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-100
0
1
V
Pulsed
GS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.2
V
= 10 V
-50
T
DS
ch
- Drain to Source Voltage - V
- Channel Temperature - ° C
I
D
0.4
10
- Drain Current - A
0
0.6
50
100
100
0.8
V
I
V
Pulsed
D
DS
GS
= 250 μA
150
= V
= 10 V
1
GS
Data Sheet D19731EJ1V0DS
1000
200
1.2
0.001
1000
1000
0.01
100
100
0.1
10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
1
5
4
3
2
1
0
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
1
0
V
Pulsed
T
DS
A
= −55°C
= 10 V
V
V
T
GS
GS
1
25°C
85°C
5
A
- Gate to Source Voltage - V
= −55°C
- Gate to Source Voltage - V
I
150°C
175°C
D
10
25°C
85°C
- Drain Current - A
10
2
150°C
175°C
NP110N055PUJ
15
3
100
V
Pulsed
I
Pulsed
D
20
DS
4
= 55 A
= 5 V
1000
25
5