TGI0910-50 TOSHIBA Semiconductor CORPORATION, TGI0910-50 Datasheet

TGI0910-50

Manufacturer Part Number

TGI0910-50

Description

Microwave Power Gan Hemt

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TGI0910-50.pdf (2 pages)

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Bonase Electronics (HK) Co., Limited

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TGI0910-50

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MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

n HIGH POWER

n HIGH GAIN

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

Recommended gate resistance(Rg) : Rg=13.3 (TYP.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is

Output Power

Drain Current

Power Added Efficiency

Linear Gain

Channel Temperature Rise

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information

contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding

with design of equipment incorporating this product.

FEATURES

Pout=47.0dBm at Pin=41.0dBm

GL=9.0dB at 9.5GHz to 10.5GHz

CHARACTERISTICS

SYMBOL

Pout

DS1

Tch

add

th(c-c)

GSoff

DSS

GSO

(VDS X IDS1 + Pin – Pout)X Rth(c-c)

Channel to Case

f = 9.5G to 10.5GHz

@Pin = 41dBm

@Pin = 20dBm

= 5

= 0V

CONDITIONS

IDSset 1.5A

CONDITIONS

n BROAD BAND INTERNALLY MATCHED HEMT

VDS= 24V

HERMETICALLY SEALED PACKAGE

5.0A

23mA

-10mA

MICROWAVE POWER GaN HEMT

TGI0910-50

Preliminary

UNIT

dBm

C/W

MIN.

46.0

-10

7.0

−

-1

TYP. MAX.

47.0

130

5.0

9.0

4.5

-4

Rev. July., 2009

150

6.0

1.6

−

-6

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TGI0910-50 Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaN HEMT TGI0910-50 n BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE CONDITIONS ...

Page 2

... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE ( 7- AA04A ) HANDLING PRECAUTIONS FOR PACKAGED MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TGI0910-50 SYMBOL UNIT ...

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