TGI7785-120L TOSHIBA Semiconductor CORPORATION, TGI7785-120L Datasheet
TGI7785-120L
Manufacturer Part Number
TGI7785-120L
Description
Microwave Power Gan Hemt
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TGI7785-120L.pdf
(2 pages)
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Transconductance
Pinch-off Voltage
Gate-Source Breakdown
Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Gain flatness
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by
implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change
without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
FEATURES
HIGH POWER
HIGH GAIN
Pout=51.0dBm at Pin=44.0dBm
GL=11.0dB at Pin=20.0dBm
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
ηadd
IDS2
IDS1
Pout
ΔTch
ΔG
SYMBOL
GL
IM3
R
V
V
th(c-c)
GSoff
gm
GSO
(VDS X IDS1 + Pin – Po) X Rth(c-c)
V
I
V
I
I
Channel to Case
DS
DS
GS
DS
DS
(Single Carrier Level)
=
=
= - 20mA
CONDITIONS
Two-Tone Test
f = 7.7 to 8.5GHz
=
= 5
@ Pin=44dBm
@Pin=20dBm
Po= 44.0dBm
CONDITIONS
IDSset=4.0A
VDS = 24V
BROAD BAND INTERNALLY MATCHED HEMT
LOW INTERMODULATION DISTORTION
10.0A
46mA
5
HERMETICALLY SEALED PACKAGE
IM3(Min.)= −25dBc at Po=44.0dBm
V
V
MICROWAVE POWER GaN HEMT
TGI7785-120L
UNIT
° C/W
UNIT
dBm
dB
dB
dBc
S
V
V
Preliminary
Single Carrier Level
%
A
A
° C
MIN.
MIN.
50.0
10.0
- 10
－
－
－
-25
－
⎯
⎯
-1
－
Rev. May, 2009
TYP. MAX.
TYP.
51.0
10.0
11.0
8.0
0.6
- 30
120
42
－
－
⎯
-4
MAX.
12.0
± 0.8
8.0
0.8
140
－
－
－
⎯
⎯
-6
－
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TGI7785-120L Summary of contents
Page 1
... TOSHIBA or others. The information contained herein is subject to change without prior notice therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaN HEMT TGI7785-120L BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE LOW INTERMODULATION DISTORTION IM3(Min.)= − ...
Page 2
... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE ( 7-AA06A) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TGI7785-120L SYMBOL UNIT ...