IRG4PH40UD2 IRF, IRG4PH40UD2 Datasheet

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IRG4PH40UD2

Manufacturer Part Number
IRG4PH40UD2
Description
Insulated Gate Bipolar Transistor
Manufacturer
IRF
Datasheet

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Part Number:
IRG4PH40UD2
Manufacturer:
IR
Quantity:
12 500
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IRG4PH40UD2-E
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Features
Benefits
V
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Wt
Absolute Maximum Ratings
Thermal / Mechanical Characteristics
www.irf.com
C
C
CM
LM
F
FM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
@ Tc = 100°C
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C Maximum Power Dissipation
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
TM
Ù
G
n-channel
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
–––
C
E
10 lbf
-55 to +150
TO-247AC
6 (0.21)
y
Max.
Typ.
in (1.1N
0.24
600
160
160
±20
160
–––
–––
–––
40
20
10
40
65
CE(on) typ.
y
m)
GE
CES
Max.
0.77
–––
–––
2.5
40
=
C
Units
Units
g (oz.)
°C/W
°C
W
V
A
V
1

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IRG4PH40UD2 Summary of contents

Page 1

... R Junction-to-Case- Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com G TM n-channel Parameter Ù ™ 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– ––– ...

Page 2

... V = 200V 10A, di/dt = 200A/µ =25° 200V 10A, di/dt = 200A/µ =125° 200V 10A, di/dt = 200A/µ A/µs T =25° 200V 10A, di/dt = 200A/µ =125° 200V 10A, di/dt = 200A/µ www.irf.com ...

Page 3

... Tsink = 90°C Gate drive as specified 5 Power Dissipation = 35W 0 0.1 1000 100 T = 25° 20µs PULSE WIDTH 1 0 Collector-to-Emitter Voltage (V) CE www.irf.com Frequency ( kHz ) RMS 1000 100 T = 150° 15V Square wave: 60% of rated voltage I Ideal diodes 150° ...

Page 4

... Rectangular Pulse Duration (sec 40A 20A 10A 100 120 140 160 T , Junction Temperature (° Notes: 1. Duty factor Peak thJC 0.1 1 www.irf.com A 10 ...

Page 5

... Cres 500 Collector-toEmitter-Voltage(V) 3500 600V 15V 25°C 3250 20A 3000 2750 2500 Gate Resistance ( Ω ) www.irf.com 14 20A 12.0 10.0 8.0 6.0 4.0 2.0 0 Total Gate Charge (nC) 11000 Ã Ω 10000 15V 9000 8000 ...

Page 6

... Ω 6000 150° 600V 5000 15V 4000 3000 2000 1000 Collecto-to-Emitter (A) 6 1000 V = 20V 125°C J 100 Collector-to-Emitter Voltage (V) CE SAFE OPERATING AREA 10 100 1000 www.irf.com ...

Page 7

... www.irf.com (rec ...

Page 8

... Vce DIODE REVERSE t2 RECOVERY ENERGY 90% Vge Vce 90 t1+5µS Vce Ic dt Eoff = Vce off d(off) f trr trr Ic dt Qrr = 10% Irr Vcc Irr DIODE RECOVERY WAVEFORMS Erec = rec www.irf.com ...

Page 9

... L 1000V 50V 6000µF 100V Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Macro Waveforms for Figure 18a's D.U. Test Circuit L C Pulsed Collector Current Test Circuit 9 ...

Page 10

... LINE H = 10Ω (figure 19) G Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 07/ 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) ...

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