P13NK50Z ST Microelectronics, P13NK50Z Datasheet - Page 3

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P13NK50Z

Manufacturer Part Number
P13NK50Z
Description
Search -----> STP13NK50Z
Manufacturer
ST Microelectronics
Datasheet

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P13NK50Z
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STx13NK50Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Symbol
Symbol
R
dv/dt
Symbol
I
P
R
V
thj-case
DM
V
V
SD
T
T
I
I
TOT
E
ISO
thj-a
T
DS
GS
stg
I
D
D
AR
J
l
AS
(2)
(3)
≤ 11 A, di/dt ≤ 200 A/µs, V
Drain-source voltage (V
Gate-source voltage
Drain current (continuous)
at T
Drain current (continuous)
at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS)
from all three leads to external heat sin
(t=1 s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient
max
Maximum lead temperature for
soldering purpose
Absolute maximum ratings
Thermal data
Avalanche characteristics
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting T
C
C
=100 °C
= 25 °C
C
= 25 °C)
J
Parameter
= 25 °C, I
Parameter
DD
C
Parameter
= 25 °C
≤ 80% V
D
GS
= I
= 0)
AR
, V
(BR)DSS
DD
= 50 V)
TO-220
TO-220, TO-247
62.5
6.93
1.12
140
11
44
0.89
-55 to 150
Value
TO-247
Value
300
± 30
500
4.5
50
Value
240
TO-220FP
11
6.93
2500
11
44
0.24
TO-220FP
Electrical ratings
30
(1)
(1)
4.17
62.5
(1)
W/°C
°C/W
V/ns
°C/W
Unit
Unit
Unit
mJ
°C
W
°C
V
V
A
A
A
V
A
3/15
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