GP1200ESM33 Dynex Semiconductor, GP1200ESM33 Datasheet - Page 5

• Manufacturer Part Number: GP1200ESM33
• Description: High Reliability Single Switch Igbt Module Advance Information
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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0
1.0
0
0
Fig.5 Diode typical forward characteristics
Common emitter
T
case
Fig.3 Typical output characteristics
= 25˚C
1.0
1.5
Collector-emitter voltage, V
Foward voltage, V
2.0
2.0
T
3.0
j
= 25˚C
2.5
F
- (V)
4.0
V
ce
ge
- (V)
= 20/15/12/10V
T
j
3.0
= 125˚C
5.0
3.5
6.0
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0
0
0
0
T
V
R
C
dV
Common emitter
T
case
ge
g(OFF)
GE
case
Fig.6 Reverse bias safe operating area
CE
= ±15V
Fig.4 Typical output characteristics
= 660nF
500
/dt < 9000V/µs
= 125˚C
= 125˚C
1.0
= 3.3Ω
Collector-emitter voltage, V
Collector-emitter voltage, V
1000
2.0
1500
3.0
2000
4.0
GP1200ESM33
V
ge
2500
ce
ce
= 20/15/12/10V
5.0
- (V)
- (V)
3000
6.0
3500
7.0
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