GP1200FSS18 Dynex Semiconductor, GP1200FSS18 Datasheet - Page 4

• Manufacturer Part Number: GP1200FSS18
• Description: Single Switch Igbt Module
• Manufacturer: Dynex Semiconductor

GP1200FSS18
ELECTRICAL CHARACTERISTICS
T
T
case
case
4/10
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
E
E
t
t
t
t
E
E
Q
d(off)
d(on)
d(off)
d(on)
Q
I
I
OFF
t
REC
OFF
REC
t
t
t
ON
ON
rr
rr
r
f
r
f
rr
rr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
I
I
F
F
= 1200A, V
= 1200A, V
R
R
G(ON)
G(ON)
dI
Test Conditions
dI
Test Conditions
F
F
/dt = 4000A/ s
/dt = 4500A/ s
V
V
V
V
I
= R
I
= R
L ~ 50nH
L ~ 50nH
C
GE
CE
C
GE
CE
= 1200A
= 1200A
= 15V
= 900V
= 900V
= 15V
G(OFF)
G(OFF)
R
R
= 50% V
= 50% V
= 2.2
= 2.2
CES
CES
,
,
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
1150
1050
Typ.
Typ.
150
650
400
300
650
425
600
250
130
550
300
250
450
250
500
180
Max.
1350
Max.
1250
300
850
550
450
800
550
200
700
400
400
650
350
-
-
-
-
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A
C
C