SI9410BDY Vishay Siliconix, SI9410BDY Datasheet - Page 2

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SI9410BDY

Manufacturer Part Number
SI9410BDY
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
b.
www.vishay.com
2
Si9410BDY
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
6
0
0.0
b
Parameter
0.5
V
a
V
a
DS
GS
1.0
Output Characteristics
a
= 10 thru 5 V
- Drain-to-Source Voltage (V)
1.5
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.0
2.5
Symbol
V
r
r
3.0
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
t
t
SD
t
rr
fs
gs
gd
r
f
4 V
g
3 V
3.5
4.0
New Product
V
V
I
DS
D
DS
^ 1 A, V
I
= 15 V, V
F
V
= 24 V, V
V
V
V
V
V
V
V
V
DS
= 2.1 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
GS
GS
DS
S
DS
DD
DD
= 2.1 A, V
= 0 V, V
= V
w 5 V, V
= 10 V, I
= 4.5 V, I
= 15 V, I
= 24 V, V
= 15 V, R
= 15 V, R
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 10 V, I
= 0 V, T
D
D
GS
GS
D
D
GS
L
L
= 250 mA
= "20 V
= 8.1 A
= 6.9 A
= 8.1 A
= 15 W
= 15 W
= 10 V
= 0 V
= 0 V
J
30
24
18
12
D
G
6
0
= 55_C
= 8.1 A
0.0
= 6 W
0.5
V
1.0
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
1.5
Min
1.0
30
T
2.0
C
25_C
= - 125_C
0.019
0.026
Typ
2.5
0.8
3.2
2.5
20
15
10
15
30
25
11
S-31409—Rev. A, 07-Jul-03
Document Number: 72269
3.0
Max
"100
0.024
0.033
- 55_C
3.5
3.0
1.2
23
15
25
45
20
50
1
5
4.0
Unit
nC
nA
mA
mA
ns
W
W
V
A
S
V
4.5

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