BCR3PM-12L Renesas, BCR3PM-12L Datasheet
BCR3PM-12L
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BCR3PM-12L Summary of contents
Page 1
... Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself ...
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... Commercial frequency, sine full wave 360 conduction, T 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value T = minute, T · T · G terminal to case BCR3PM LOW POWER USE Dimensions in mm 10.5 MAX 2.8 5.2 3.2 0.2 1.3 MAX 0.8 2.54 2.54 ...
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... T =125 C, V =1/ DRM 3 Junction to case 4 T =125 C j item1) GT Commutating voltage and current waveforms 3.8 10 BCR3PM LOW POWER USE Limits Min. Typ. Max. — — 2.0 — — 1.5 — — 1.5 — — 1.5 — — 1.5 5 — — — ...
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... MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE I RGT III I I FGT I, RGT I –40 – 100 120 140 JUNCTION TEMPERATURE ( C) MAXIMUM TRANSIENT THERMAL ...
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... TYPICAL 120 EXAMPLE 100 100 120 140 –60 BCR3PM LOW POWER USE VS. RMS ON-STATE CURRENT NATURAL CONVECTION NO FINS CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE –40 –20 ...
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... VALUE I QUADRANT GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6V TEST PROCEDURE TEST PROCEDURE 3 BCR3PM LOW POWER USE TYPICAL TIME EXAMPLE (di/dt 125 C TIME TIME V (dv/dt 500 200V 3Hz ...
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... Commercial frequency, sine full wave 360 conduction, T 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value T = minute, T · T · G terminal to case BCR3PM LOW POWER USE Dimensions in mm 10.5 MAX 2.8 5.2 3.2 0.2 1.3 MAX 0.8 2.54 2.54 ...
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... DRM 3 Junction to case 4 T =125 C/150 C j item1) GT Commutating voltage and current waveforms 150 3.0 3.5 4.0 10 BCR3PM LOW POWER USE Limits Min. Typ. Max. — — 2.0 — — 1.5 — — 1.5 — — 1.5 — — 1.5 5 — — — ...
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... ALLOWABLE CASE TEMPERATURE 160 140 CURVES APPLY 120 REGARDLESS OF CONDUCTION ANGLE 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 4.0 0 BCR3PM LOW POWER USE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE I RGT III I I FGT I, RGT I –40 – 100 120 ...
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... TYPICAL 120 EXAMPLE 100 100 120 140 160 –60 –40 BCR3PM LOW POWER USE VS. RMS ON-STATE CURRENT NATURAL CONVECTION NO FINS CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE – ...
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... 3Hz 7 5 III QUADRANT BCR3PM LOW POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (T = 150 C) j TYPICAL EXAMPLE T = 150 C j III QUADRANT I QUADRANT ...
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... TEST PROCEDURE 1 TEST PROCEDURE TEST PROCEDURE 3 MITSUBISHI SEMICONDUCTOR TRIAC INSULATED TYPE, PLANAR PASSIVATION TYPE RECOMMENDED CIRCUIT VALUES BCR3PM LOW POWER USE AROUND THE TRIAC LOAD 0.1~0. 0 47~100 R = 100 ...