BSM400GB60DN2 Siemens (acquired by Infineon Technologies Corporation), BSM400GB60DN2 Datasheet - Page 8

• Manufacturer Part Number: BSM400GB60DN2
• Description: Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Package With Insulated Metal Base Plate )
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

Forward characteristics of fast recovery
reverse diode
Semiconductor Group
parameter: T
I
F
800
600
500
400
300
200
100
A
0
0.0
j
0.5
I
F
= f(V
1.0
T
j
=125°C
F
)
1.5
T
j
=25°C
2.0
V
V
F
3.0
8
Transient thermal impedance
Z
parameter: D = t
Z
thJC
th JC
K/W
10
10
10
10
10
= ( t
-1
-2
-3
-4
0
10
-5
p
)
single pulse
10
p
-4
/ T
BSM 400 GB 60 DN2
10
-3
10
-2
Diode
D = 0.50
10
Apr-25-1997
t
-1
p
0.20
0.10
0.05
0.02
0.01
s
10
0