L011 IXYS Corporation, L011 Datasheet

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L011

Manufacturer Part Number

L011

Description

Fast Recovery Epitaxial Diode (fred) Module

Manufacturer

IXYS Corporation

Datasheet

1.L011.pdf (2 pages)

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© 2000 IXYS All rights reserved

Fast Recovery

Epitaxial Diode

(FRED) Module

Symbol

I

I

I

I

I

T

T

T

P

V

M

d

d

a

Weight

Symbol

I

V

V

r

R

R

t

I

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

FRMS

FAVM

FRM

FSM

2

R

rr

RM

T

V

200

t

VJ

stg

Smax

S

A

tot

ISOL

F

T0

thJH

thJC

d

RSM

V

I

FAVM

ÿÿ

rating includes reverse blocking losses at T

V

200

RRM

V

T

T

t

T

T

T

T

T

50/60 Hz, RMS t = 1 min

I

Mounting torque (M6)

Terminal connection torque (M6)

Creep distance on surface

Strike distance through air

Maximum allowable acceleration

T

T

T

I

I

For power-loss calculations only

DC current

DC current

I

V

-di/dt =

Test Conditions

Test Conditions

P

ISOL

F

F

F

C

C

VJ

VJ

VJ

VJ

C

VJ

VJ

VJ

R

< 10 ms; rep. rating, pulse width limited by T

=

=

=

=

= 25°C

=

=

= 45°C;

= 150°C; t = 10 ms (50 Hz), sine

= 45°C;

= 150°C; t = 10 ms (50 Hz), sine

= 25°C

= 25°C

= 125°C

£ 1 mA

300

520

500

100

75

75

200

°C

°C; rectangular, d = 0.5

A;

A;

V

A

Type

MEO 550-02DA

A/ms

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

t = 8.3 ms (60 Hz), sine

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

t = 8.3 ms (60 Hz), sine

V

V

V

T

T

T

T

VJ

VJ

VJ

VJ

R

R

R

t = 1 s

= V

= 0.8 • V

= 0.8 • V

= 125°C

= 25°C

= 125°C

= 25°C

RRM

T

T

T

VJ

VJ

VJ

= 100°C

= 25°C

= 100°C

RRM

RRM

VJM

, V

R

= 0.6 V

RRM

Characteristic Values (per diode)

, duty cycle d = 0.5

MEO 550-02 DA

VJM

150

typ.

2.25-2.75/20-25

4.50-5.50/40-48

3

Maximum Ratings

-40...+150

-40...+125

115200

117100

max.

93300

94800

0.114

0.071

4800

5280

4320

4750

1750

3000

3600

2880

12.7

1.10

1.25

0.52

1.06

0.84

1.08

822

582

110

150

160

200

9.6

50

15

5

4

9

Nm/lb.in.

Nm/lb.in.

1

m/s

K/W

K/W

mm

mm

mW

A

A

A

A

mA

mA

mA

V~

V~

°C

°C

°C

ns

W

A

A

A

A

A

A

A

g

V

V

V

V

V

A

A

2

2

2

2

s

s

s

s

2

V

I

t

Features

Applications

Advantages

Dimensions in mm (1 mm = 0.0394")

FAVM

rr

International standard package

with DCB ceramic base plate

Planar passivated chips

Short recovery time

Low switching losses

Soft recovery behaviour

Isolation voltage 3600 V~

UL registered E 72873

Antiparallel diode for high frequency

switching devices

Free wheeling diode in converters

and motor control circuits

Inductive heating and melting

Uninterruptible power supplies (UPS)

Ultrasonic cleaners and welders

High reliability circuit operation

Low voltage peaks for reduced

protection circuits

Low noise switching

Low losses

RRM

= 200 V

= 582 A

= 150 ns

1

3

1 - 2

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