ACS08DMSR Intersil Corporation, ACS08DMSR Datasheet - Page 2

• Manufacturer Part Number: ACS08DMSR
• Description: Radiation Hardened Quad 2-Input And Gate
• Manufacturer: Intersil Corporation

Die Characteristics
DIE DIMENSIONS:
METALLIZATION: Al
SUBSTRATE POTENTIAL:
Metallization Mask Layout
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: [phone]
FAX: [phone]
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Size: 2390 m x 2390 m (94 mils x 94 mils)
Thickness: 525 m 25 m (20.6 mils 1 mil)
Bond Pad: 110 m x 110 m (4.3 mils x 4.3 mils)
Metal 1 Thickness: 0.7 m 0.1 m
Metal 2 Thickness: 1.0 m 0.1 m
Unbiased Insulator
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
NC
A2
B2
Y1
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: [phone]
FAX: [phone]
Y2
B1
ACS08MS
GND
ACS08MS
A1
2
PASSIVATION
SPECIAL INSTRUCTIONS:
ADDITIONAL INFORMATION:
V
Y3
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30 m 0.15 m
Bond V
Worst Case Density: <2.0 x 10
Transistor Count: 176
CC
CC
B4
A3
First
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: [phone]
FAX: [phone]
A4
Y4
NC
B3
5
A/cm
2