Si7892DP Vishay Intertechnology, Si7892DP Datasheet - Page 2

• Manufacturer Part Number: Si7892DP
• Description: N-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7892DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
60
50
40
30
20
10
0
0
b
Parameter
V
GS
1
V
a
a
DS
= 10 thru 4 V
Output Characteristics
a
- Drain-to-Source Voltage (V)
2
a
a
J
3 V
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
5
V
V
I
DS
D
DS
^ 1 A, V
I
= 15 V, V
F
V
= 24 V, V
V
V
V
V
V
V
V
V
DS
= 2.9 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
S
DS
GS
DD
DD
GS
DS
= 4.5 A, V
= 0 V, V
= V
w 5 V, V
= 24 V, V
= 10 V, I
= 15 V, R
= 15 V, R
= 4.5 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 4.5 V, I
GS
= 0 V, T
D
GS
D
GS
GS
D
= 250 mA
D
L
L
= "20 V
= 25 A
= 22 A
= 15 W
= 15 W
= 25 A
= 10 V
= 0 V
= 0 V
J
D
G
= 55_C
50
40
30
20
10
= 25 A
= 6 W
0
0
V
1
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
T
Min
1.0
0.5
30
C
25_C
= 125_C
2
0.0037
0.0048
Typ
0.75
6.7
9.7
80
25
17
10
65
35
50
S-31727—Rev. B, 18-Aug-03
Document Number: 71773
3
-55_C
0.0045
"100
Max
0.006
130
1.2
2.4
35
30
20
60
80
1
5
4
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
5