SI7958DP Vishay Intertechnology, SI7958DP Datasheet - Page 2

• Manufacturer Part Number: SI7958DP
• Description: Dual N-channel 40-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Si7958DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resostamce
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
40
32
24
16
b
8
0
0
Parameter
a
a
1
V
DS
a
Output Characteristics
− Drain-to-Source Voltage (V)
V
GS
J
a
a
= 10 thru 4 V
2
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
D(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
4
3 V
New Product
5
V
V
DS
I
D
DS
^ 1 A, V
= 20 V, V
I
V
F
V
= 40 V, V
V
V
V
V
V
GS
V
V
DS
= 2.9 A, di/dt = 100 A/ms
GS
DS
I
DS
DS
Test Condition
S
DS
DD
DD
= 2.9 A, V
= 4.5 V, I
= 0 V, V
w 5 V, V
= 10 V, I
= 15 V, I
= V
= 40 V, V
= 20 V, R
= 20 V, R
f = 1 MHz
GEN
GS
GS
GS
, I
= 10 V, I
= 10 V, R
GS
= 0 V, T
D
D
GS
GS
D
D
GS
= 250 mA
L
L
= 11.3 A
= "20 V
= 11.3 A
= 10.3 A
= 20 W
= 20 W
= 10 V
= 0 V
= 0 V
D
J
40
30
20
10
g
0
= 55_C
= 11.3 A
0.0
= 6 W
0.5
V
GS
1.0
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
30
1.5
1
2.0
T
25_C
0.013
0.016
Typ
C
10.4
0.8
8.8
1.9
30
50
17
17
66
17
31
S-32677—Rev. A, 29-Dec-03
= 125_C
2.5
Document Number: 72661
0.0165
3.0
"100
Max
0.020
100
1.2
75
30
30
30
60
3
1
5
−55_C
3.5
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
4.0