Si7921DN Vishay Intertechnology, Si7921DN Datasheet - Page 3

• Manufacturer Part Number: Si7921DN
• Description: Dual P-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72341
S-31613—Rev. A, 11-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 5.1 A
On-Resistance vs. Drain Current
= 15 V
2
V
4
GS
V
SD
Q
= 4.5 V
0.4
g
- Source-to-Drain Voltage (V)
I
D
- Total Gate Charge (nC)
4
- Drain Current (A)
Gate Charge
8
T
0.6
J
= 150_C
6
0.8
12
8
V
T
1.0
J
GS
= 25_C
= 10 V
16
10
1.2
1.4
20
12
New Product
0.30
0.25
0.20
0.15
0.10
0.05
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
C
D
- 25
GS
rss
= 5.1 A
5
= 10 V
2
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
10
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
4
Vishay Siliconix
C
I
50
C
15
D
oss
iss
= 5.1 A
6
75
20
Si7921DN
100
www.vishay.com
8
25
125
150
10
30
3