MCH5801 Sanyo Semiconductor Corporation, MCH5801 Datasheet - Page 2

• Manufacturer Part Number: MCH5801
• Description: DC/DC Converters
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25 C
Electrical Connection
Switching Time Test Circuit
[MOSFET]
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
P.G
5
1
4V
0V
PW=10 s
D.C. 1%
V IN
Parameter
2
V IN
G
50
4
3
(Top view)
V DD =10V
D
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
S
I D =1A
R L =10
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
MCH5801
V GS (off)
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
V F 1
V F 2
yfs
Qg
V R
I R
t rr
C
t r
t f
V OUT
I D =1mA, V GS =0
V DS =20V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =1A
I D =1A, V GS =4V
I D =0.5A, V GS =2.5V
I D =0.1A, V GS =1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
V DS =10V, V GS =10V, I D =1.5A
V DS =10V, V GS =10V, I D =1.5A
V DS =10V, V GS =10V, I D =1.5A
I S =1.5A, V GS =0
I R =0.5mA
I F =0.3A
I F =0.5A
V R =6V
V R =10V, f=1MHz, 1 cycle
I F =I R =100mA, See specified Test Circuit.
MCH5801
trr Test Circuit
[SBD]
Conditions
Duty 10%
10 s
50
--5V
100
min
0.4
1.9
20
15
10
Ratings
typ
0.35
0.40
160
200
280
100
2.8
6.5
4.5
0.4
0.4
0.9
22
15
28
19
13
20
max
0.40
0.45
210
280
390
200
1.3
1.2
10
10
t rr
1
No.6941-2/5
Unit
m
m
m
pF
pF
pF
nC
nC
nC
pF
ns
ns
ns
ns
ns
V
V
S
V
V
V
V
A
A
A