MCH5811 Sanyo Semiconductor Corporation, MCH5811 Datasheet - Page 2

• Manufacturer Part Number: MCH5811
• Description: Mosfet : N-channel Silicon Mosfet SBD : Schottky Barrier Diode General-purpose Switching Device Applications
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25 C
Package Dimensions
unit : mm
2195
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Parameter
(Bottom view)
0.65
4
3
2.0
2
1
5
0.3
1
5
(Top view)
2
0.15
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
4
3
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
V F 1
V F 2
yfs
Qg
V R
I R
t rr
C
t r
t f
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
I D =1mA, V GS =0
V DS =20V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =1A
I D =1A, V GS =4V
I D =0.5A, V GS =2.5V
I D =0.1A, V GS =1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
V DS =10V, V GS =10V, I D =1.5A
V DS =10V, V GS =10V, I D =1.5A
V DS =10V, V GS =10V, I D =1.5A
I S =1.5A, V GS =0
I R =0.5mA
I F =0.3A
I F =0.5A
V R =6V
V R =10V, f=1MHz, 1 cycle
I F =I R =100mA, See specified Test Circuit.
MCH5811
Conditions
Electrical Connection
5
1
min
2
1.68
0.4
20
15
3
4
Ratings
typ
0.30
0.33
160
200
280
100
2.8
6.5
4.5
0.4
0.4
0.9
22
15
28
19
13
20
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
Top view
max
0.33
0.36
210
280
390
1.3
1.2
10
90
10
1
No.8059-2/6
Unit
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
pF
ns
V
V
S
V
V
V
V
A
A
A