MCH6405 Sanyo Semiconductor Corporation, MCH6405 Datasheet

MCH6405

Manufacturer Part Number

MCH6405

Description

Ultrahigh-speed Switching , Package : MCPH6

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH6405.pdf (4 pages)

Current page: 1 of 4
Download datasheet (28Kb)

Ordering number : ENN7012

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : KE

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

2.5V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

I D =1mA, V GS =0

V DS =20V, V GS =0

V GS = 8V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =3A

I D =3A, V GS =4V

I D =1.5A, V GS =2.5V

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

MCH6405

Conditions

Package Dimensions

unit : mm

2193A

Conditions

0.65

2.0

0.8mm)

0.3

[MCH6405]

min

N-Channel Silicon MOSFET

0.5

6.3

71801 TS IM TA-3314

Ratings

0.15

typ

Ratings

MCH6405

Continued on next page.

--55 to +150

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

SANYO : MCPH6

max

150

1.3

1.5

No.7012-1/4

Unit

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