SI7186DP Vishay Siliconix, SI7186DP Datasheet

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SI7186DP

Manufacturer Part Number
SI7186DP
Description
N-Channel 80-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7186DP
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7186DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7186DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7186DP-T1-GE3
Quantity:
150
www.DataSheet.co.kr
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
g. Package Limited.
Document Number: 69257
S09-0271-Rev. B, 16-Feb-09
Ordering Information: Si7186DP-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
80
(V)
8
6.15 mm
D
C
= 25 °C.
7
0.0125 at V
D
Si7186DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
R
D
DS(on)
PowerPAK SO-8
Bottom View
5
D
GS
J
(Ω)
= 150 °C)
b, f
= 10 V
1
S
N-Channel 80-V (D-S) MOSFET
2
S
3
I
S
D
32
5.15 mm
(A)
4
Steady State
g
G
a
d, e
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
46 nC
(Typ.)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Primary Side Switch
• POL
• Intermediate Bus Converter
Available
Typical
1.0
18
g
Tested
®
Power MOSFET
- 55 to 150
14.5
11.5
4.5
5.2
3.3
Limit
± 20
32
32
32
260
80
60
30
45
64
44
b, c
b, c
b, c
g
g
b, c
b, c
g
Maximum
G
1.5
23
Vishay Siliconix
N-Channel MOSFET
Si7186DP
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI7186DP Summary of contents

Page 1

... PowerPAK SO-8 6. Bottom View Ordering Information: Si7186DP-T1-E3 (Lead (Pb)-free) Si7186DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... Si7186DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance ...

Page 3

... Drain Current ( Gate Charge Si7186DP Vishay Siliconix 3.0 2.4 1 125 ° °C 0.6 25 °C 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 3600 2880 C iss 2160 1440 ...

Page 4

... Si7186DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 10 150 °C 1 0.1 0.01 0.001 0.00 0.2 0 Source-to-Drain Voltage (V) DS Source-Drain Diode Forward Voltage 0.6 0.3 0.0 - 0.3 - 0.6 - 0.9 - 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 25 °C 0.6 0.8 1.0 1 250 µ 100 125 150 100 Limited by R ...

Page 5

... Package Limited 100 T - Case Temperature (°C) C Current Derating* 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7186DP Vishay Siliconix 125 150 2.5 2.0 1.5 1.0 0.5 0 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www ...

Page 6

... Si7186DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... TYP. 3.98 TYP. 6.15 6.25 5.89 5.99 3.66 3.84 3.78 3.91 0.75 TYP. 1.27 BSC 1.27 TYP 0.61 0.71 0.61 0.71 0.13 0.20 - 12° 0.25 0.36 0.125 TYP. Package Information Vishay Siliconix Backside View of Single Pad Backside View of Dual Pad INCHES MIN. NOM. MAX. 0.038 0.041 0.044 0.000 - 0.002 0.013 ...

Page 8

... Under specific conditions of board configuration, copper weight and layer stack, experiments have found that more than about 0.25 to 0.5 in land) will yield little improvement in thermal perfor- mance. Vishay Siliconix Standard SO-8 PowerPAK SO-8 Figure additional copper (in addition to the drain www.vishay.com ...

Page 9

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 24 mils. This matches the spacing of the two drain pads on the Pow- erPAK SO-8 dual package ...

Page 10

... No significant effect was observed. Si7446DP 1 100 10000 Figure 6. Spreading Copper Junction-to-Ambient Performance Vishay Siliconix R vs. Spreading Copper 100 % Back Copper 100 % ...

Page 11

... AN821 Vishay Siliconix SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET r with temperature (Figure 7). DS(on) On-Resistance vs. Junction Temperature 1 1 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J Figure 7. MOSFET r DS(on) A MOSFET generates internal heat due to the current passing through the channel ...

Page 12

... RECOMMENDED MINIMUM PADS FOR PowerPAK 0.024 (0.61) 0.026 (0.66) Return to Index Return to Index Document Number: 72599 Revision: 21-Jan-08 ® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.032 (1.27) (0.82) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix 0.040 (1.02) www.vishay.com 15 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 13

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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