VRT801 Seoul Semiconductor, VRT801 Datasheet - Page 5

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VRT801

Manufacturer Part Number
VRT801
Description
Surface-mount LED
Manufacturer
Seoul Semiconductor
Datasheet
*1. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of
the LED package. Luminous Intensity Measurement allowance is ±10%
*2. 2
Forward Voltage
Reverse Current
Luminance Intensity
Peak Wavelength
Dominant Wavelength
Spectral Bandwidth 50%
Viewing Angle
θ
½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2
Operating Temperature
Peak Forward Current
IFM
Storage Temperature
Power Dissipation
Forward Current
Reverse Voltage
2. Absolute maximum ratings
3. Electric characteristics
was measured at
Parameter
Parameter
*2
*1
TW
≤ 1msec of pulse width and D ≤ 1/10 of duty ratio.
Symbol
I
T
T
FM
2
V
Symbol
P
I
opr
stg
θ
F
d
R
*2
V
∆λ
λ
λ
I
I
½
V
R
P
d
F
Condition
I
I
I
I
I
I
F
F
F
F
F
F
V
=20mA
=20mA
=20mA
=20mA
=20mA
=20mA
R
=5V
-40 ~ +100
-40 ~ +100
Value
100
30
78
5
Min
200
620
1.8
-
-
-
-
서식번호 : SSC-QP-7-07-24 (Rev.00)
Typ
320
640
625
120
2.2
18
-
Unit
mW
mA
mA
o
o
V
C
C
Max
630
2.6
10
-
-
-
-
November 2007
November 2007
www.ZLED.com
www.ZLED.com
Unit
mcd
deg.
nm
nm
nm
µA
V
Rev. 00
Rev. 00

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