BSP308 Infineon Technologies Corporation, BSP308 Datasheet - Page 7

• Manufacturer Part Number: BSP308
• Description: Sipmos(r) Small-signal-transistor: 30v, 4.7a
• Manufacturer: Infineon Technologies Corporation

Drain-source on-resistance
R
parameter : I
Typ. capacitances
C = f(V
parameter: V
DS(on)
pF
0.12
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
10
10
10
-60
3
2
1
0
DS
BSP308
= f ( T
)
5
-20
D
GS
j
)
10
= 4.7 , V
=0 V, f =1 MHz
20
98%
15
typ
60
20
GS
= 10 V
25
100
30
Ciss
Coss
Crss
°C
V
T
VDS
Preliminary data
j
180
40
Page 7
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
V
V
V
V
A
3.0
3.0
3.0
3.0
2.4
2.4
2.4
2.4
2.2
2.2
2.2
2.2
2.0
2.0
2.0
2.0
1.8
1.8
1.8
1.8
1.6
1.6
1.6
1.6
1.4
1.4
1.4
1.4
1.2
1.2
1.2
1.2
1.0
1.0
1.0
1.0
0.8
0.8
0.8
0.8
0.6
0.6
0.6
0.6
0.4
0.4
0.4
0.4
0.2
0.2
0.2
0.2
0.0
0.0
0.0
0.0
-1
-60
-60
-60
-60
0.0
2
1
0
BSP308
= f ( T j )
SD
0.4
)
-20
-20
-20
-20
GS
98%
2%
typ
0.8
p
= V
20
20
20
20
= 80 µs
1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
, I
60
60
60
60
1.6
D
= 20 µA
100
100
100
100
2.0
1999-09-22
2.4
BSP308
°C
°C
°C
°C
V
T
T
T
T
V
j
j
j
j
SD
180
180
180
180
3.0