BCX51-10 Infineon Technologies Corporation, BCX51-10 Datasheet - Page 3

• Manufacturer Part Number: BCX51-10
• Description: PNP Silicon af Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
Collector cutoff current
V
DC current gain 1)
I
DC current gain 1)
I
DC current gain 1)
I
Collector-emitter saturation voltage1)
I
Base-emitter voltage 1)
I
AC Characteristics
Transition frequency
I
1) Pulse test: t = 300 s, D = 2%
C
C
E
C
C
C
C
C
C
CB
CB
= 10 µA, I
= 10 mA, I
= 100 µA, I
= 5 mA, V
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, V
= 50 mA, V
= 30 V, I
= 30 V, I
C
CE
B
E
E
B
CE
= 0
B
= 0
CE
CE
CE
= 0
= 0 , T
= 0
= 2 V
= 50 mA
= 10 V, f = 20 MHz
= 2 V
= 2 V
= 2 V
A
= 150 °C
A
= 25°C, unless otherwise specified.
BXP51
BXP52
BXP53
BXP51
BXP52
BXP53
BCX51...53
hFE-grp.10
hFE-grp.16
3
Symbol
V
V
V
I
I
h
h
h
V
V
f
CBO
CBO
T
FE
FE
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
min.
100
100
45
60
80
45
60
25
40
63
25
5
-
-
-
-
-
Values
typ.
100
160
125
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BCX51...BCX53
max.
100
250
160
250
0.5
20
Jul-23-2001
1
-
-
-
-
-
-
-
-
-
-
Unit
V
nA
µA
-
V
MHz