2SB649 Renesas, 2SB649 Datasheet - Page 5

• Manufacturer Part Number: 2SB649
• Description: Bipolar Power General Purpose Transistor
• Manufacturer: Renesas

–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
350
350
250
200
150
100
–0
50
0
–1
–1
V
I
C
CE
Base to Emitter Saturation Voltage
= 10 I
= –5V
DC Current Transfer Ratio
Collector current I
Collector current I
vs. Collector Current
B
–10
vs. Collector Current
–10
–100
C
–100
C
(mA)
(mA)
–1,000
–1,000
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
240
200
160
120
–1
80
40
0
–10
I
C
V
= 10 I
CE
Collector to Emitter Saturation
Voltage vs. Collector Current
Collector current I
= –5 V
B
Collector current I
–30
Gain Bandwidth Product
–10
vs. Collector Current
–100
2SB649, 2SB649A
–100
C
(mA)
C
–300
(mA)
25
–25
–1,000
–1,000
5