FJX597J Fairchild Semiconductor, FJX597J Datasheet

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FJX597J

Manufacturer Part Number
FJX597J
Description
Silicon N-channel Junction Fet
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
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Part Number:
FJX597JHTF
Manufacturer:
Fairchild Semiconductor
Quantity:
1 985
©2001 Fairchild Semiconductor Corporation
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
Si N-channel Junction FET
Absolute Maximum Ratings
Electrical Characteristics
I
DSS
V
I
I
P
T
T
BV
V
I
lY
C
C
G
D
DSS
Symbol
J
STG
GDO
D
GS
ISS
RSS
FS
Classification
GDO
Symbol
(off)
l
I
DSS
Classification
[ A]
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
100 ~ 170
Parameter
A
T
a
=25 C unless otherwise noted
T
150 ~ 240
Parameter
a
=25 C unless otherwise noted
B
Marking
FJX597J
V
V
V
V
V
I
S C X
G
DS
DS
DS
DS
DS
= -100uA
=5V, I
=5V, V
=5V, V
=5V, V
=5V, V
Test Condition
D
210 ~ 350
GS
GS
GS
GS
=1 A
=0, f=1MHz
=0
=0, f=1MHz
=0, f=1MHz
C
Grade
1. Base 2. Emitter 3. Collector
Min.
100
320 ~ 480
-20
0.4
-55 ~ 150
D
Ratings
3
100
150
-20
10
1
Typ.
0.65
-0.6
1.2
3.5
1
Max.
-1.5
800
440 ~ 800
SOT-323
E
2
Units
mW
Rev. A1, June 2001
mA
mA
V
C
C
Units
ms
pF
pF
V
V
A

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FJX597J Summary of contents

Page 1

... Forward Transfer Admittance FS C Input Capacitance ISS C Output Capacitance RSS I Classification DSS Classification 100 ~ 170 DSS ©2001 Fairchild Semiconductor Corporation FJX597J T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100uA G V =5V =5V ...

Page 2

... Reduced Voltage Characteristic Frequency Characteristic V Z Input Resistance IN Z Output Resistance O THD Total Harmonic Distortion V Output Noise Voltage OSC ©2001 Fairchild Semiconductor Corporation T =25 C unless otherwise noted a Test Condition V =10mV, f=1KHz IN V =10mV, f=1KHz IN V =4.5V 1.5V CC f=1KHz to 110Hz f=1KHz f=1KHz V =30mV, f=1KHz ...

Page 3

... D DS 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -1.6 -1.4 -1.2 -1.0 -0.8 V [V], GATE-SOURCE VOLTAGE GS Figure 0.1 0.1 I [mA], DRAIN CURRENT DSS Figure 5. V (off)-I GS ©2001 Fairchild Semiconductor Corporation 1000 I = 200 A DSS 900 800 700 600 500 400 300 200 100 V = -0.4V = -0. 0.1 -0.6 -0.4 -0.2 0.0 100 ...

Page 4

... I [ A], DRAIN CURRENT DSS Figure DSS 100 I [ A], DRAIN CURRENT DSS Figure DSS ©2001 Fairchild Semiconductor Corporation (Continued) 140 120 f = 1MHz 100 700 V :V =4. CURVE ...

Page 5

... I [ A], DRAIN CURRENT DSS Figure 13. G V-I V 100 100 A DSS I = 400 A DSS 1 0 120 V [mV], INPUT VOLTAGE IN Figure 15. THD-V ©2001 Fairchild Semiconductor Corporation (Continued 4.5V → 1. 10mV 1kHz =5V DSS -10 1000 ...

Page 6

... Package Demensions 2.00±0.20 1.25±0.10 1.00±0.10 ©2001 Fairchild Semiconductor Corporation SOT-323 2.10±0.10 0.95±0.15 ±0.10 +0.05 0.05 –0.02 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min 3° 0.90 1.30±0.10 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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