PDTA123Y NXP Semiconductors, PDTA123Y Datasheet - Page 5

• Manufacturer Part Number: PDTA123Y
• Description: PNP resistor-equipped transistors
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 8.
T
PDTA123Y_SER_4
Product data sheet
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
c
= 25 C unless otherwise specified
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 C
= 10 mA; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 300 mV; I
= 10 V; I
Rev. 04 — 3 September 2009
C
C
C
E
B
B
B
E
= 0 A
= 5 mA
= 100 A
= 0 A
= 0 A
= 0 A;
= 0.5 mA
= i
PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k
C
e
= 20 mA
= 0 A;
Min
-
-
-
-
35
-
-
1.54
3.6
-
2.5
PDTA123Y series
Typ
-
-
-
-
-
-
2.2
4.5
-
0.75
1.15
Max
-
-
2.86
5.5
2
© NXP B.V. 2009. All rights reserved.
w w w . D a t a S h e e t 4 U
100
1
50
700
150
0.3
Unit
nA
mV
V
V
k
pF
A
A
A
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