FMBT3904 Formosa MS, FMBT3904 Datasheet

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FMBT3904

Manufacturer Part Number
FMBT3904
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Formosa MS
Datasheet
FMBT3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The FMBT3904 is designed for general purpose switching amplifier
applications.
Absolute Maximum Ratings
Characteristics
FMBT3904
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
Storage Temperature ....................................................................................................... -65 ~ +150 C
Junction Temperature ................................................................................................................ +150 C
Total Power Dissipation (Ta=25 C)......................................................................................... 225 mW
VCBO Collector to Base Voltage .................................................................................................... 60 V
VCEO Collector to Emitter Voltage ................................................................................................ 40 V
VEBO Emitter to Base Voltage ......................................................................................................... 6 V
IC Collector Current .................................................................................................................... 200 mA
Formosa MS
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
BVCBO
BVCEO
BVEBO
Symbol
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
ICEX
Cob
fT
FORMOSA
MICROSEMI CO., LTD.
Min.
650
100
300
60
40
40
70
60
30
(Ta=25 C)
6
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
200
300
850
950
300
50
4
-
-
-
-
-
-
-
-
MHz
Unit
mV
mV
mV
mV
nA
pF
V
V
V
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
IC=10uA
IC=1mA
IC=10uA
VCE=30V, VBE=-3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
Test Conditions
FORMOSA MS Product Specification
Spec. No. : FMSC003
Issued Date : 2002/12/25
Revised Date :
Page No. : 1/3
SOT-23

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FMBT3904 Summary of contents

Page 1

... FORMOSA MICROSEMI CO., LTD. Formosa MS FMBT3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The FMBT3904 is designed for general purpose switching amplifier applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ....................................................................................................... -65 ~ +150 C Junction Temperature ................................................................................................................ +150 C Maximum Power Dissipation Total Power Dissipation (Ta=25 C)......................................................................................... 225 mW Maximum Voltages and Currents (Ta=25 C) VCBO Collector to Base Voltage ...

Page 2

... BE(sat =10I 1000 125 C 100 1 10 Collector Current-I C Cutoff Frequency & Collector Current 1000 V 100 10 0.1 1 Collector Current (mA) FMBT3904 1000 100 10 100 1000 0.1 100 1000 0.1 (mA) 10000 1000 100 =20V 0.1 0.01 0.001 10 100 1 Spec. No. : FMSC003 Issued Date : 2002/12/25 Revised Date : Page No ...

Page 3

... FORMOSA MS semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. FORMOSA MS assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Head Office & Factory (TAIPEI): 4F.,No.21, Lane 126, Sec. 3, Chung-Yang. Rd. Tu-Cheng, Taipei County, Taiwan R.O.C. Tel: 886-2-2269-6661 Fax: 886-2-2269-6141 FMBT3904 ...

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