2SB1218A Panasonic Semiconductor, 2SB1218A Datasheet

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2SB1218A

Manufacturer Part Number

2SB1218A

Description

Silicon PNP epitaxial planer type

Manufacturer

Panasonic Semiconductor

Datasheet

1.2SB1218A.pdf (3 pages)

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Part Number

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Current page: 1 of 3
Download datasheet (49Kb)

Transistor

2SB1218A

Silicon PNP epitaxial planer type

For general amplification

Complementary to 2SD1819A

*

h

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

FE

Features

High foward current transfer ratio h

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings

Electrical Characteristics

Rank classification

Marking Symbol

Parameter

Rank

h

Parameter

FE

160 ~ 260

Symbol

V

V

V

I

I

P

T

T

BQ

CP

C

Q

C

j

stg

CBO

CEO

EBO

I

I

V

V

V

h

V

f

C

CBO

CEO

T

FE

(Ta=25˚C)

Symbol

CBO

CEO

EBO

CE(sat)

ob

*

(Ta=25˚C)

FE

210 ~ 340

–55 ~ +150

.

BR

Ratings

R

–200

–100

–45

–45

150

150

–7

V

V

I

I

I

V

I

V

V

C

C

E

C

CB

CE

CE

CB

CB

= –10 A, I

= –2mA, I

= –10 A, I

= –100mA, I

= –10V, I

= –10V, I

290 ~ 460

= –20V, I

= –10V, I

= –10V, I

BS

S

Unit

mW

mA

mA

Conditions

˚C

˚C

B

V

V

V

C

E

B

C

E

E

E

= 0

= 0

= 0

B

= 0

= 1mA, f = 200MHz

= 0, f = 1MHz

= 0

= –2mA

= –10mA

Marking symbol :

1:Base

2:Emitter

3:Collector

min

–45

–45

160

–7

0.425

1

2

EIAJ:SC–70

S-Mini Type Package

– 0.3

B

typ

2.7

80

1.25 0.1

2.1 0.1

0.2 0.1

–100

– 0.5

max

0.425

–0.1

460

3

Unit: mm

MHz

Unit

pF

V

V

V

V

A

A

1

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