2SB1699 Panasonic Semiconductor, 2SB1699 Datasheet

2SB1699

Manufacturer Part Number

2SB1699

Description

Silicon PNP epitaxial planar type

Manufacturer

Panasonic Semiconductor

Datasheet

1.2SB1699.pdf (3 pages)

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Transistors

2SB1699

Silicon PNP epitaxial planar type

For power amplification

■ Features

■ Absolute Maximum Ratings T

Note) * : Print circuit board: Copper foil area of 1 cm

■ Electrical Characteristics T

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: April 2004

• Low collector-emitter saturation voltage V

• Mini Power type package, allowing downsizing of the equipment

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cut-off current (Base open)

Forward current transfer ratio

Collector-emitter saturation voltage

Turn-on time

Storage time

Fall time

Transition frequency

and automatic insertion through the tape packing and the maga-

zine packing.

2. * : Pulse measurement

thickness of 1.7 mm for the collector portion

Parameter

Symbol

= 25°C ± 3°C

Symbol

CBO

CEO

EBO

stg

CE(sat)

CBO

CEO

FE1

FE2

FE3

= 25°C

stg

CE(sat)

−55 to +150

or more, and the board

Rating

−60

150

−6

−2

−4

= −1 mA, I

= −2 A, I

= −1 A, I

= − 0.1 A, V

SJC00304AED

= −60 V, I

= −4 V, I

= −10 V, I

= −60 V, I

Conditions

Unit

= −250 mA

°C

= 0.1 A

= 0

= −1 A

= − 0.2 A

= −2 A

= 50 mA, f = 200 MHz

= 0

= −50 V

Marking Symbol: 3A

0.4

1.5

±0.08

±0.1

3˚

3.0

4.5

1.6

Min

−60

±0.15

±0.1

±0.2

0.5

±0.08

Typ

180

0.2

0.4

0.1

MiniP3-F1 Package

45˚

−100

− 0.5

Max

250

1.5

±0.1

0.4

1: Base

2: Collector

3: Emitter

±0.04

Unit: mm

MHz

Unit

µA



µs

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2SB1699 Summary of contents

Page 1

... Transistors 2SB1699 Silicon PNP epitaxial planar type For power amplification ■ Features • Low collector-emitter saturation voltage V • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. ■ Absolute Maximum Ratings T ...

Page 2

... 1.2 1 0.8 0.6 0.4 0 100 120 140 160 Ambient temperature T (°C) a  CE(sat) C − −1 = 85°C T −10 −1 a −25°C −10 −2 25°C −10 −3 − 0.1 −1 −10 −10 −10 − Collector current I (mA) ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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