MC100EPT20 ON Semiconductor, MC100EPT20 Datasheet - Page 4

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MC100EPT20

Manufacturer Part Number
MC100EPT20
Description
3.3VLVTTL/LVCMOS to Differential LVPECL Translator
Manufacturer
ON Semiconductor
Datasheet

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NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
4. Output parameters vary 1:1 with V
5. All loading with 50 W to V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
6. Measured using a LVTTL source, 50% duty cycle clock source. All loading with 50 W to V
7. Skew is measured between outputs under identical transitions.
Table 6. 100EPT PECL OUTPUT DC CHARACTERISTICS
Table 7. AC CHARACTERISTICS
I
V
V
f
t
t
t
t
t
t
Symbol
CC
Symbol
max
PLH
PHL
SKEW
JITTER
r
f
OH
OL
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Negative Power Supply Current
Output HIGH Voltage (Note 5)
Output LOW Voltage (Note 5)
Maximum Input Clock Frequency
Propagation Delay to
Output Differential
Device−to−Device Skew (Note 7)
RMS Random Clock Jitter
Output Rise/Fall Times
(20% − 80%)
Characteristic
Characteristic
CC
− 2.0 V.
CC
.
V
CC
= 3.0 V to 3.6 V, GND = 0 V (Note 6)
Q, Q
MC10EPT20, MC100EPT20
2155
1355
Min
280
Min
70
20
http://onsemi.com
−40 C
−40 C
2280
1480
Typ
350
100
Typ
> 1
< 1
25
V
4
CC
2405
1605
= 3.3 V, GND = 0 V (Note 4)
Max
Max
430
150
170
< 2
30
2155
1355
Min
Min
300
22
80
25 C
2280
1480
25 C
Typ
Typ
370
120
> 1
< 1
27
CC
− 2.0 V.
2405
1605
Max
Max
450
150
180
32
< 2
2155
1355
Min
Min
320
23
90
85 C
2280
1480
85 C
Typ
Typ
400
140
28
> 1
< 1
2405
1605
Max
Max
33
490
170
190
< 2
Unit
Unit
GHz
mA
mV
mV
ps
ps
ps
ps

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