MC100EPT25 ON Semiconductor, MC100EPT25 Datasheet - Page 3

• Manufacturer Part Number: MC100EPT25
• Description: Differential LVECL/ECL to LVTTL Translator
• Manufacturer: ON Semiconductor

NOTE: 100EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
5. All loading with 500 ohms to GND, CL = 20pF.
6. Skews are measured between outputs under identical conditions.
7. 200mV input guarantees full logic swing at the output.
TTL OUTPUT DC CHARACTERISTICS (V CC = 3.3V
AC CHARACTERISTICS (V CC = 3.3V
I CCH
I CCL
V OH
V OL
I OS
f max
t PLH ,
t PHL
t SK+ +
t SK– –
t SKPP
t JITTER
V PP
t r
t f
Symbol
Symbol
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
Maximum Toggle Frequency
Propagation Delay to
Output Differential
Output–to–Output Skew++
Output–to–Output Skew– –
Part–to–Part Skew (Note 6.)
Cycle–to–Cycle Jitter
Input Voltage Swing
(Differential) (Note 7.)
Output Rise/Fall Times
(0.8V – 2.0V)
Power Supply Current (Outputs set to HIGH)
Power Supply Current (Outputs set to LOW)
Output HIGH Voltage (I OH = –3.0mA) (Note 5.)
Output LOW Voltage (I OL = 24mA) (Note 5.)
Output Short Circuit Current
Characteristic
Q, Q
0.3V; GND = 0V)
Characteristic
Min
275
800
100
450
900
http://onsemi.com
–40 C
1200
1160
TBD
Typ
500
800
600
MC100EPT25
60
25
0.3V; GND = 0V; V EE = –3.3V
1800
1200
1400
Max
3
750
Min
275
800
100
450
900
25 C
1100
1100
TBD
Typ
500
800
600
60
25
1600
1200
1400
Max
750
0.3V; T A = –40 C to 85 C)
Min
275
800
100
450
900
–130
Min
6.0
7.0
2.2
85 C
1100
1100
TBD
Typ
500
800
600
Typ
60
25
10
12
1600
1200
1400
Max
Max
750
–60
0.5
14
17
Unit
Unit
MHz
mA
mA
mA
mV
ns
ps
ps
ps
V
V