12F508 Microchip Technology, 12F508 Datasheet - Page 69

• Manufacturer Part Number: 12F508
• Description: Search -----> PIC12F508
• Manufacturer: Microchip Technology

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10.0
Absolute Maximum Ratings
Ambient temperature under bias.......................................................................................................... -40°C to +125°C
Storage temperature ............................................................................................................................ -65°C to +150°C
Voltage on V
Voltage on MCLR with respect to V
Voltage on all other pins with respect to V
Total power dissipation
Max. current out of V
Max. current into V
Input clamp current, I
Output clamp current, I
Max. output current sunk by any I/O pin .............................................................................................................. 25 mA
Max. output current sourced by any I/O pin ......................................................................................................... 25 mA
Max. output current sourced by I/O port .............................................................................................................. 75 mA
Max. output current sunk by I/O port ................................................................................................................... 75 mA
© 2005 Microchip Technology Inc.
†
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: P
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
ELECTRICAL CHARACTERISTICS
DD
with respect to V
DD
SS
IK
pin ................................................................................................................................... 150 mA
(1)
OK
(V
pin ................................................................................................................................ 200 mA
.................................................................................................................................. 800 mW
I
(V
< 0 or V
O
< 0 or V
SS
I
SS
............................................................................................................... 0 to +6.5V
> V
(†)
..........................................................................................................0 to +13.5V
O
DD
> V
SS
)
DD
............................................................................... -0.3V to (V
)
Preliminary
DIS
PIC12F508/509/16F505
= V
DD
x {I
DD
– ∑ I
OH
} + ∑ {(V
DD
– V
OH
) x I
OH
DS41236B-page 67
} + ∑(V
DD
+ 0.3V)
OL
20 mA
20 mA
x I
OL
)