ISL6610A Intersil Corporation, ISL6610A Datasheet - Page 8

• Manufacturer Part Number: ISL6610A
• Description: Dual Synchronous Rectified MOSFET Drivers
• Manufacturer: Intersil Corporation

Application Information
MOSFET and Driver Selection
The parasitic inductances of the PCB and of the power
devices’ packaging (both upper and lower MOSFETs) can
cause serious ringing, exceeding absolute maximum rating
of the devices. The negative ringing at the edges of the
PHASE node could increase the bootstrap capacitor voltage
through the internal bootstrap diode, and in some cases, it
may overstress the upper MOSFET driver. Careful layout,
proper selection of MOSFETs and packaging, as well as the
proper driver can go a long way toward minimizing such
unwanted stress.
The selection of D
a much better match (for the reasons discussed) for the
ISL6610A with a phase resistor, as shown in Figure 5. Low-
FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
FIGURE 5. PHASE RESISTOR TO MINIMIZE SERIOUS
PVCC
PVCC
PVCC
R
R
NEGATIVE PHASE SPIKE
LO2
HI2
R
R
R
R
LO1
LO1
HI1
HI1
2
-PAK, or D-PAK packaged MOSFETs, is
GND
LGATE
UGATE
UGATE
PHASE
PHASE
BOOT
BOOT
R
8
G2
R
G
G1
G
G
R
C
R
GI2
PH
GD
R
C
C
GI1
GD
=1-2Ω
GS
C
GS
S
S
S
D
D
D
Q2
Q1
C
ISL6610, ISL6610A
DS
Q1
C
DS
profile MOSFETs, such as Direct FETs and multi-SOURCE
leads devices (SO-8, LFPAK, PowerPAK), have low parasitic
lead inductances and can be driven by either ISL6610 or
ISL6610A (assuming proper layout design). The ISL6610,
missing the 3Ω integrated BOOT resistor, typically yields
slightly higher efficiency than the ISL6610A.
Layout Considerations
A good layout helps reduce the ringing on the switching
node (PHASE) and significantly lower the stress applied to
the output drives. The following advice is meant to lead to an
optimized layout and performance:
• Keep decoupling loops (VCC-GND, PVCC-PGND and
• Minimize trace inductance, especially on low-impedance
• Shorten all gate drive loops (UGATE-PHASE and LGATE-
• Minimize the inductance of the PHASE node. Ideally, the
• Minimize the current loop of the output and input power
• Avoid routing relatively high impedance nodes (such as
In addition, connecting the thermal pad of the QFN package
to the power ground through multiple vias, or placing a low
noise copper plane (such as power ground) underneath the
SOIC part is recommended. This is to improve heat
dissipation and allow the part to achieve its full thermal
potential.
Upper MOSFET Self Turn-On Effects At Startup
Should the driver have insufficient bias voltage applied, its
outputs are floating. If the input bus is energized at a high
dV/dt rate while the driver outputs are floating, due to the
self-coupling via the internal C
UGATE could momentarily rise up to a level greater than the
threshold voltage of the MOSFET. This could potentially turn
on the upper switch and result in damaging inrush energy.
BOOT-PHASE) short and wide, at least 25 mils. Avoid
using vias on decoupling components other than their
ground terminals, which should be on a copper plane with
at least two vias.
lines. All power traces (UGATE, PHASE, LGATE, PGND,
PVCC, VCC, GND) should be short and wide, at least 25
mils. Try to place power traces on a single layer,
otherwise, two vias on interconnection are preferred
where possible. For no connection (NC) pins on the QFN
part, connect it to the adjacent net (LGATE2/PHASE2) can
reduce trace inductance.
PGND) and route them closely spaced.
source of the upper and the drain of the lower MOSFET
should be as close as thermally allowable.
trains. Short the source connection of the lower MOSFET
to ground as close to the transistor pin as feasible. Input
capacitors (especially ceramic decoupling) should be
placed as close to the drain of upper and source of lower
MOSFETs as possible.
PWM and ENABLE lines) close to high dV/dt UGATE and
PHASE nodes.
GD
of the MOSFET, the
November 22, 2006
FN6395.0