FS4KM-12 Mitsubishi Electric Semiconductor, FS4KM-12 Datasheet

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FS4KM-12

Manufacturer Part Number
FS4KM-12
Description
HIGH-SPEED SWITCHING USE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FS4KM-12
Manufacturer:
MITSUBISHI
Quantity:
12 500
Part Number:
FS4KM-12A
Manufacturer:
MITSUBISHI
Quantity:
11
Part Number:
FS4KM-12A
Manufacturer:
ST
Quantity:
20 000
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS
V
V
I
I
P
T
T
FS3UM-10
¡V
¡r
¡I
D
DM
Symbol
DSS
GSS
D
ch
stg
DS (ON) (MAX) .................................................................
D ............................................................................................
DSS ................................................................................
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter
(Tc = 25 C)
V
V
Typical value
GS
DS
= 0V
= 0V
Conditions
500V
4.4
3A
OUTLINE DRAWING
q
MITSUBISHI Nch POWER MOSFET
HIGH-SPEED SWITCHING USE
2.54
10.5MAX.
q w e
w r
e
FS3UM-10
TO-220
2.54
0.8
r
1.0
–55 ~ +150
–55 ~ +150
q GATE
w DRAIN
e SOURCE
r DRAIN
Ratings
3.6
500
2.0
60
30
3
9
0.5
Dimensions in mm
4.5
1.3
2.6
Feb.1999
Unit
W
V
V
A
A
g
C
C

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FS4KM-12 Summary of contents

Page 1

FS3UM-10 ¡V DSS ................................................................................ ¡r DS (ON) (MAX) ................................................................. ¡I D ............................................................................................ APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS ( Symbol Parameter V ...

Page 2

ELECTRICAL CHARACTERISTICS (Tch = 25 C) Symbol Parameter V Drain-source breakdown voltage (BR) DSS V Gate-source breakdown voltage (BR) GSS I Gate-source leakage current GSS I Drain-source leakage current DSS V Gate-source threshold voltage GS (th) r Drain-source on-state resistance ...

Page 3

ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL 25°C C Pulse Test GATE-SOURCE VOLTAGE V (V) GS TRANSFER CHARACTERISTICS (TYPICAL ...

Page 4

GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 Tch = 25° 100V DS 200V 12 400V GATE CHARGE Q (nC) g ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) ...

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