STD100NH02L ST Microelectronics, STD100NH02L Datasheet - Page 4

• Manufacturer Part Number: STD100NH02L
• Description: N-CHANNEL POWER MOSFET
• Manufacturer: ST Microelectronics

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Q
3. Gate charge for synchronous operation
V
Symbol
Symbol
R
Q
CASE
V
Q
(BR)DSS
g
C
I
I
DS(on)
C
C
GS(th)
Q
Q
oss
R
DSS
GSS
fs
Q
gls
oss
oss =
rss
iss
gs
gd
G
g
(1)
(3)
(2)
=25°C unless otherwise specified)
C
oss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Third-quadrant gate charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
*∆ V
On/off states
Dynamic
DS
in ,
= 0)
C
Parameter
Parameter
oss =
GS
= 0)
C
gd +
C
ds .
See
Chapter Appendix A
I
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1MHz gate DC Bias = 0
Test signal level = 20mV
Open drain
D
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DS
DS
= 25mA, V
= V
= 20
= 20, T
= ±20V
= 10V, I
= 5V, I
= 15V, f = 1 MHz,
= 0
= 10V
= 16V, V
< 0V, V
= 10 V
= 10V, I
Test conditions
Test conditions
GS
, I
D
,
C
D
GS
D
I
D
= 15A
D
GS
GS
= 125°C
= 250µA
= 30A
= 30A
= 30A
= 10V
= 0
= 0V
Min.
Min.
24
1
0.0042
0.005
Typ.
3940
1020
Typ.
56.5
1.8
110
1.1
50
62
12
24
8
STD100NH02L
0.0048
0.009
Max.
Max.
±100
84
10
1
Unit
Unit
nC
nC
nC
nC
nC
µA
µA
nA
pF
pF
pF
S
Ω
V
V
Ω
Ω