1SS387 TOSHIBA Semiconductor CORPORATION, 1SS387 Datasheet

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1SS387

Manufacturer Part Number
1SS387
Description
Toshiba Diode Silicon Epitaxial Planar Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Ultra High Speed Switching Applications
Maximum Ratings
Electrical Characteristics
Compact 2-pin package – ideal for high-density mounting
Low forward voltage
Fast reverse recovery time : t
Small total capacitance
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
* : Mounted on a glass epoxy circuit board of 20 × 20mm,
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
pad dimension of 4 × 4mm.
Characteristic
Characteristic
(Ta = 25°C)
: V
: C
rr
TOSHIBA Diode Silicon Epitaxial Planar Type
F (3)
T
= 1.6ns (typ.)
= 0.5pF (typ.)
(Ta = 25°C)
= 0.98V (typ.)
Symbol
Symbol
V
V
V
I
I
V
I
T
R (1)
R (2)
FSM
I
V
F (1)
F (2)
F (3)
C
FM
I
t
T
RM
P
stg
O
rr
R
T
j
1SS387
Circuit
Test
−55∼125
Rating
150 *
200
100
125
85
80
1
1
I
I
I
V
V
V
I
F
F
F
F
R
R
R
= 1mA
= 10mA
= 100mA
= 10mA, Fig.1
= 30V
= 80V
= 0, f = 1MH
Test Condition
Unit
mW
mA
mA
°C
°C
V
V
A
z
JEDEC
JEITA
TOSHIBA
Weight: 1.4mg(typ)
Min
Typ.
0.62
0.75
0.98
0.5
1.6
1-1G1A
2005-01-08
Max
1.20
0.1
0.5
3.0
4.0
1SS387
Unit: mm
Unit
µA
pF
ns
V

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1SS387 Summary of contents

Page 1

... F I ― 30V R ( ― 80V R ( ― 1MH ― 10mA, Fig 1SS387 Unit: mm JEDEC ― JEITA ― 1-1G1A TOSHIBA Weight: 1.4mg(typ) Min Typ. Max Unit ― 0.62 ― V ― 0.75 ― ― 0.98 1.20 ― ― 0.1 µA ― ...

Page 2

... Fig.1 Reverse Recovery Time Test Circuit ( 1SS387 Pin Assignment (Top View) Marking 2005-01-08 ...

Page 3

... 3 1SS387 2005-01-08 ...

Page 4

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 1SS387 030619EAA 2005-01-08 ...

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